Impact of the circuit layout on the charge collection in a monolithic pixel sensor

Fuente: arXiv

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Bibliographic Details
Main Authors:	Lemoine, Corentin, Ballabriga, Rafael, Buschmann, Eric, Campbell, Michael, Mohr, Raimon Casanova, Dannheim, Dominik, Dilg, Jona, Dorda, Ana, King, Finn, Feyens, Ono, Gadow, Philipp, Gregor, Ingrid-Maria, Hansen, Karsten, He, Yajun, Huth, Lennart, Kremastiotis, Iraklis, Maffessanti, Stefano, Mendes, Larissa, Otarid, Younes, Reckleben, Christian, Rettie, Sébastien, Viera, Manuel Alejandro del Rio, Daza, Sara Ruiz, Schlaadt, Judith, Simancas, Adriana, Snoeys, Walter, Spannagel, Simon, Vanat, Tomas, Velyka, Anastasiia, Vignola, Gianpiero, Wennlöf, Håkan
Format:	Preprint
Published:	2025
Subjects:	Instrumentation and Detectors High Energy Physics - Experiment
Online Access:	Acceder al recurso
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_version_	1866915217868324864
author	Lemoine, Corentin Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana King, Finn Feyens, Ono Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan
author_facet	Lemoine, Corentin Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana King, Finn Feyens, Ono Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan
contents	CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern. This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
format	Preprint
id	arxiv_https___arxiv_org_abs_2503_21853
institution	arXiv
publishDate	2025
record_format	arxiv
spellingShingle	Impact of the circuit layout on the charge collection in a monolithic pixel sensor Lemoine, Corentin Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana King, Finn Feyens, Ono Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan Instrumentation and Detectors High Energy Physics - Experiment CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern. This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
title	Impact of the circuit layout on the charge collection in a monolithic pixel sensor
topic	Instrumentation and Detectors High Energy Physics - Experiment
url	https://arxiv.org/abs/2503.21853