Performance Characterizations and Usage Guidelines of Samsung CXL Memory Module Hybrid Prototype

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Hauptverfasser: Zeng, Jianping, Pei, Shuyi, Zhang, Da, Zhou, Yuchen, Beygi, Amir, Yao, Xuebin, Kachare, Ramdas, Zhang, Tong, Li, Zongwang, Nguyen, Marie, Pitchumani, Rekha, Ki, Yang Soek, Jung, Changhee
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Veröffentlicht: 2025
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author Zeng, Jianping
Pei, Shuyi
Zhang, Da
Zhou, Yuchen
Beygi, Amir
Yao, Xuebin
Kachare, Ramdas
Zhang, Tong
Li, Zongwang
Nguyen, Marie
Pitchumani, Rekha
Ki, Yang Soek
Jung, Changhee
author_facet Zeng, Jianping
Pei, Shuyi
Zhang, Da
Zhou, Yuchen
Beygi, Amir
Yao, Xuebin
Kachare, Ramdas
Zhang, Tong
Li, Zongwang
Nguyen, Marie
Pitchumani, Rekha
Ki, Yang Soek
Jung, Changhee
contents The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory technologies like DRAM. While DRAM offers low latency and high throughput, it is constrained by high costs, scalability challenges, and volatility, making it less viable for capacity-bound and persistent applications in modern datacenters. Recently, Compute Express Link (CXL) has emerged as a promising alternative, enabling high-speed, cacheline-granular communication between CPUs and external devices. By leveraging CXL technology, NAND flash can now be used as memory expansion, offering three-fold benefits: byte-addressability, scalable capacity, and persistence at a low cost. Samsung's CXL Memory Module Hybrid (CMM-H) is the first product to deliver these benefits through a hardware-only solution, i.e., it does not incur any OS and IO overheads like conventional block devices. In particular, CMM-H integrates a DRAM cache with NAND flash in a single device to deliver near-DRAM latency. This paper presents the first publicly available study for comprehensive characterizations of an FPGA-based CMM-H prototype. Through this study, we address users' concerns about whether a wide variety of applications can successfully run on a memory device backed by NAND flash medium. Additionally, based on these characterizations, we provide key insights into how to best take advantage of the CMM-H device.
format Preprint
id arxiv_https___arxiv_org_abs_2503_22017
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Performance Characterizations and Usage Guidelines of Samsung CXL Memory Module Hybrid Prototype
Zeng, Jianping
Pei, Shuyi
Zhang, Da
Zhou, Yuchen
Beygi, Amir
Yao, Xuebin
Kachare, Ramdas
Zhang, Tong
Li, Zongwang
Nguyen, Marie
Pitchumani, Rekha
Ki, Yang Soek
Jung, Changhee
Hardware Architecture
The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory technologies like DRAM. While DRAM offers low latency and high throughput, it is constrained by high costs, scalability challenges, and volatility, making it less viable for capacity-bound and persistent applications in modern datacenters. Recently, Compute Express Link (CXL) has emerged as a promising alternative, enabling high-speed, cacheline-granular communication between CPUs and external devices. By leveraging CXL technology, NAND flash can now be used as memory expansion, offering three-fold benefits: byte-addressability, scalable capacity, and persistence at a low cost. Samsung's CXL Memory Module Hybrid (CMM-H) is the first product to deliver these benefits through a hardware-only solution, i.e., it does not incur any OS and IO overheads like conventional block devices. In particular, CMM-H integrates a DRAM cache with NAND flash in a single device to deliver near-DRAM latency. This paper presents the first publicly available study for comprehensive characterizations of an FPGA-based CMM-H prototype. Through this study, we address users' concerns about whether a wide variety of applications can successfully run on a memory device backed by NAND flash medium. Additionally, based on these characterizations, we provide key insights into how to best take advantage of the CMM-H device.
title Performance Characterizations and Usage Guidelines of Samsung CXL Memory Module Hybrid Prototype
topic Hardware Architecture
url https://arxiv.org/abs/2503.22017