Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913763679010816 |
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| author | Ellis, Hunter D. Li, Botong Xie, Haoyu Fan, Jichao Rahaman, Imteaz Gao, Weilu Fu, Kai |
| author_facet | Ellis, Hunter D. Li, Botong Xie, Haoyu Fan, Jichao Rahaman, Imteaz Gao, Weilu Fu, Kai |
| contents | $β$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the lack of viable p-type doping have hindered its full potential, particularly in the development of ambipolar devices. This work introduces a novel heterojunction diode (HD) that combines p-type carbon nanotubes (CNTs) with i/n-type $β$-Ga$_2$O$_3$ to overcome these limitations. For the first time, a CNT/$β$-Ga$_2$O$_3$ hetero-p-n-junction diode is fabricated. Compared to a traditional Schottky barrier diode (SBD) with the same $β$-Ga$_2$O$_3$ epilayer, the CNT/$β$-Ga$_2$O$_3$ HD demonstrates significant improvements, including a higher rectifying ratio ($1.2 \times 10^{11}$), a larger turn-on voltage (1.96 V), a drastically reduced leakage current at temperatures up to 300 °C, and a 26.7% increase in breakdown voltage. Notably, the CNT/$β$-Ga$_2$O$_3$ HD exhibits a low ideality factor of 1.02, signifying an ideal interface between the materials. These results underline the potential of CNT/$β$-Ga$_2$O$_3$ heterojunctions for electronic applications, offering a promising solution to current limitations in $β$-Ga$_2$O$_3$-based devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_22123 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes Ellis, Hunter D. Li, Botong Xie, Haoyu Fan, Jichao Rahaman, Imteaz Gao, Weilu Fu, Kai Applied Physics Materials Science $β$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the lack of viable p-type doping have hindered its full potential, particularly in the development of ambipolar devices. This work introduces a novel heterojunction diode (HD) that combines p-type carbon nanotubes (CNTs) with i/n-type $β$-Ga$_2$O$_3$ to overcome these limitations. For the first time, a CNT/$β$-Ga$_2$O$_3$ hetero-p-n-junction diode is fabricated. Compared to a traditional Schottky barrier diode (SBD) with the same $β$-Ga$_2$O$_3$ epilayer, the CNT/$β$-Ga$_2$O$_3$ HD demonstrates significant improvements, including a higher rectifying ratio ($1.2 \times 10^{11}$), a larger turn-on voltage (1.96 V), a drastically reduced leakage current at temperatures up to 300 °C, and a 26.7% increase in breakdown voltage. Notably, the CNT/$β$-Ga$_2$O$_3$ HD exhibits a low ideality factor of 1.02, signifying an ideal interface between the materials. These results underline the potential of CNT/$β$-Ga$_2$O$_3$ heterojunctions for electronic applications, offering a promising solution to current limitations in $β$-Ga$_2$O$_3$-based devices. |
| title | Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2503.22123 |