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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.22173 |
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| _version_ | 1866916799946162176 |
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| author | Guo, Zhenzhou Wang, Xiaotian Wang, Wenhong Zhang, Gang Zhou, Xiaodong Cheng, Zhenxiang |
| author_facet | Guo, Zhenzhou Wang, Xiaotian Wang, Wenhong Zhang, Gang Zhou, Xiaodong Cheng, Zhenxiang |
| contents | Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These systems uniquely combine spin-polarized electronic states with vanishing net magnetization, enabling ultrafast spin dynamics, high-density integration, and robustness against stray magnetic fields. Their unconventional symmetry-breaking mechanisms-governed by crystal symmetry, chiral spin textures, or interlayer potential control-give rise to emergent phenomena previously exclusive to ferromagnets: nonrelativistic spin-momentum locking, spontaneous anomalous transport phenomena, gate-tunable magneto-optical responses, and nonrelativistic spin-polarized current. This review systematically examines the fundamental principles linking symmetry, band topology, and transport properties across these material classes, synthesizing recent breakthroughs in both theory and experiment. We further identify critical challenges in achieving room-temperature functionality, scalable Neel vector control, and coherent spin-current manipulation, while outlining pathways to harness these materials for ultra-low-power memory, spin-logic architectures, and quantum information technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_22173 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin-Polarized Antiferromagnetic Spintronics Guo, Zhenzhou Wang, Xiaotian Wang, Wenhong Zhang, Gang Zhou, Xiaodong Cheng, Zhenxiang Materials Science Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These systems uniquely combine spin-polarized electronic states with vanishing net magnetization, enabling ultrafast spin dynamics, high-density integration, and robustness against stray magnetic fields. Their unconventional symmetry-breaking mechanisms-governed by crystal symmetry, chiral spin textures, or interlayer potential control-give rise to emergent phenomena previously exclusive to ferromagnets: nonrelativistic spin-momentum locking, spontaneous anomalous transport phenomena, gate-tunable magneto-optical responses, and nonrelativistic spin-polarized current. This review systematically examines the fundamental principles linking symmetry, band topology, and transport properties across these material classes, synthesizing recent breakthroughs in both theory and experiment. We further identify critical challenges in achieving room-temperature functionality, scalable Neel vector control, and coherent spin-current manipulation, while outlining pathways to harness these materials for ultra-low-power memory, spin-logic architectures, and quantum information technologies. |
| title | Spin-Polarized Antiferromagnetic Spintronics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2503.22173 |