Saved in:
| Main Authors: | Li, Jiajun, Qi, Hui, Zhou, Feifei, Song, Yumeng, Xu, Nanyang, Hong, Bo, Chen, Hongwei, Dong, Ying, Wang, Xinqing |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2503.22270 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
by: Jousseaume, Yann, et al.
Published: (2024)
by: Jousseaume, Yann, et al.
Published: (2024)
Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities
by: Bao, Tongyuan, et al.
Published: (2025)
by: Bao, Tongyuan, et al.
Published: (2025)
Deterministic and Scalable Coupling of Single 4H‐SiC Spin Defects into Bullseye Cavities
by: Tongyuan Bao, et al.
Published: (2025)
by: Tongyuan Bao, et al.
Published: (2025)
Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
by: Schwarberg, Jannik H., et al.
Published: (2026)
by: Schwarberg, Jannik H., et al.
Published: (2026)
Preparation of jointed composites with interconnected SiC nanowires network for nuclear SiC fiber reinforced SiC composites
by: Meihan Ren, et al.
Published: (2024)
by: Meihan Ren, et al.
Published: (2024)
Study on the Damage of 6H‐SiC During the Grinding Process by C‐Ion Implantation Based on Molecular Dynamics
by: Qi Zheng, et al.
Published: (2025)
by: Qi Zheng, et al.
Published: (2025)
Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation
by: Tathfif, Infiter, et al.
Published: (2025)
by: Tathfif, Infiter, et al.
Published: (2025)
Crater-shaped Enrichment of $\mathrm{V}_\mathrm{Si}$ Color Centers in $4H$-SiC using Single-Pulse Near-Infrared Femtosecond Laser Processing
by: Yan, Mengzhi, et al.
Published: (2024)
by: Yan, Mengzhi, et al.
Published: (2024)
Differential absorption ozone Lidar with 4H-SiC single-photon detectors
by: Zhao, Xian-Song, et al.
Published: (2024)
by: Zhao, Xian-Song, et al.
Published: (2024)
Development of Segmented 4H-SiC LGADs
by: Kráčmar, Vojtěch, et al.
Published: (2026)
by: Kráčmar, Vojtěch, et al.
Published: (2026)
Densification and optimization of SiC f /SiC composites by low‐temperature NITE process
by: Xu Shen, et al.
Published: (2025)
by: Xu Shen, et al.
Published: (2025)
The study of 4H-SiC LGAD after proton radiation
by: Zhao, Sen, et al.
Published: (2025)
by: Zhao, Sen, et al.
Published: (2025)
High Performance 4H-SiC Optically Controlled MOS Transistor
by: Chen, Sitian, et al.
Published: (2026)
by: Chen, Sitian, et al.
Published: (2026)
Detection of the linear SiC$_3$ and SiC$_5$ radicals in IRC\,+10216
by: Cernicharo, José, et al.
Published: (2025)
by: Cernicharo, José, et al.
Published: (2025)
On the experimental properties of the TS defect in 4H-SiC
by: Lehmeyer, Johannes A. F., et al.
Published: (2024)
by: Lehmeyer, Johannes A. F., et al.
Published: (2024)
TCAD Parameters for 4H-SiC: A Review
by: Burin, Jürgen, et al.
Published: (2024)
by: Burin, Jürgen, et al.
Published: (2024)
Nanoindentation pop‐in anisotropy responses of 4H SiC
by: Y. F. Wang, et al.
Published: (2025)
by: Y. F. Wang, et al.
Published: (2025)
TCAD Simulations of Radiation Damage in 4H-SiC
by: Burin, Jürgen, et al.
Published: (2024)
by: Burin, Jürgen, et al.
Published: (2024)
Charge Collection Performance of 4H-SiC LGAD
by: Zhao, Sen, et al.
Published: (2024)
by: Zhao, Sen, et al.
Published: (2024)
High-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC
by: Hu, Qi-Cheng, et al.
Published: (2025)
by: Hu, Qi-Cheng, et al.
Published: (2025)
Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
by: Zhao, Xin, et al.
Published: (2025)
by: Zhao, Xin, et al.
Published: (2025)
Preparation and mechanical behavior of Yb 2 Si 2 O 7 interphase in SiC f /SiC minicomposites
by: Shuang Mu, et al.
Published: (2024)
by: Shuang Mu, et al.
Published: (2024)
Integrated time-bin entangled quantum light source on a 4H-SiC microring chip
by: Zeng, Hong, et al.
Published: (2026)
by: Zeng, Hong, et al.
Published: (2026)
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
by: Shafizade, Danial, et al.
Published: (2025)
by: Shafizade, Danial, et al.
Published: (2025)
Study on Grinding Wheel Wear and Machining Quality in Ultrasonic Vibration Helical Grinding of SiC f /SiC Composites
by: Junjie Zhou, et al.
Published: (2026)
by: Junjie Zhou, et al.
Published: (2026)
High Response Speed Broadband Photodetectors Based on Poly‐Si/4H‐SiC Heterojunction
by: Zihao Li, et al.
Published: (2025)
by: Zihao Li, et al.
Published: (2025)
Influence of SiC content in B 4 C– n SiC composites corrosion in molten FLiNaK salt at 800°C
by: Kui Wang, et al.
Published: (2024)
by: Kui Wang, et al.
Published: (2024)
Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC
by: Bulancea-Lindvall, Oscar, et al.
Published: (2024)
by: Bulancea-Lindvall, Oscar, et al.
Published: (2024)
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
by: Benamra, Yamina, et al.
Published: (2025)
by: Benamra, Yamina, et al.
Published: (2025)
Raman-enabled platicon microcomb in 4H-SiC microresonator
by: Li, Jingwei, et al.
Published: (2025)
by: Li, Jingwei, et al.
Published: (2025)
Measurements of dislocations in 4H-SiC with rocking curve imaging
by: Khaliq, Ahmar, et al.
Published: (2024)
by: Khaliq, Ahmar, et al.
Published: (2024)
New Debye Temperature Model of 4H‐SiC Crystal
by: Wei Jun Hsiung, et al.
Published: (2024)
by: Wei Jun Hsiung, et al.
Published: (2024)
Time Resolution of a Novel Ultra-fast Graphene-Optimized 4H-SiC PIN
by: Xiao, Suyu, et al.
Published: (2026)
by: Xiao, Suyu, et al.
Published: (2026)
4H-SiC PIN detector for alpha particles from room temperature to 90 °C
by: Li, Xingchen, et al.
Published: (2025)
by: Li, Xingchen, et al.
Published: (2025)
Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material
by: Xiaofang Ye, et al.
Published: (2024)
by: Xiaofang Ye, et al.
Published: (2024)
Optically Active Point Defects in 4H–SiC: Identification of Microscopic Mechanisms and Prospects for Quantum Applications
by: Xin Zhao, et al.
Published: (2025)
by: Xin Zhao, et al.
Published: (2025)
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
by: Cauwet, François, et al.
Published: (2024)
by: Cauwet, François, et al.
Published: (2024)
BN recession and recession cessation in SiC/BN/SiC composites
by: Shingo Kanazawa, et al.
Published: (2025)
by: Shingo Kanazawa, et al.
Published: (2025)
Epitaxially-stabilized growth of wüstite FeO on 4H-SiC
by: Kimbugwe, Faisal, et al.
Published: (2025)
by: Kimbugwe, Faisal, et al.
Published: (2025)
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
by: Younesi, Ali Tayefeh, et al.
Published: (2026)
by: Younesi, Ali Tayefeh, et al.
Published: (2026)
Similar Items
-
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
by: Jousseaume, Yann, et al.
Published: (2024) -
Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities
by: Bao, Tongyuan, et al.
Published: (2025) -
Deterministic and Scalable Coupling of Single 4H‐SiC Spin Defects into Bullseye Cavities
by: Tongyuan Bao, et al.
Published: (2025) -
Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
by: Schwarberg, Jannik H., et al.
Published: (2026) -
Preparation of jointed composites with interconnected SiC nanowires network for nuclear SiC fiber reinforced SiC composites
by: Meihan Ren, et al.
Published: (2024)