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Main Authors: Sauty, Mylène, Banon, Jean-Philippe, Lopes, Nicolas M. S., Tak, Tanay, Speck, James S., Weisbuch, Claude, Peretti, Jacques
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2503.22393
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author Sauty, Mylène
Banon, Jean-Philippe
Lopes, Nicolas M. S.
Tak, Tanay
Speck, James S.
Weisbuch, Claude
Peretti, Jacques
author_facet Sauty, Mylène
Banon, Jean-Philippe
Lopes, Nicolas M. S.
Tak, Tanay
Speck, James S.
Weisbuch, Claude
Peretti, Jacques
contents The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.
format Preprint
id arxiv_https___arxiv_org_abs_2503_22393
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Sauty, Mylène
Banon, Jean-Philippe
Lopes, Nicolas M. S.
Tak, Tanay
Speck, James S.
Weisbuch, Claude
Peretti, Jacques
Materials Science
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.
title Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
topic Materials Science
url https://arxiv.org/abs/2503.22393