Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
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arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866912301751205888 |
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| author | Sarkar, Soumya Liu, Xiwen Jariwala, Deep |
| author_facet | Sarkar, Soumya Liu, Xiwen Jariwala, Deep |
| contents | Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying current-voltage hysteretic characteristics that enable self-selecting designs critical for high-density memory. We examine progress in FeDs based on CMOS-compatible HZO, AlScN, and emerging van der Waals ferroelectrics. While FeDs demonstrate promising ON/OFF ratios and rectification capabilities, they face persistent challenges including limited write-cycling endurance, elevated operating voltages, and insufficient read currents. We provide materials-focused strategies to enhance reliability and performance of FeDs for energy-efficient electronic memory applications, with emphasis on their unique self-rectifying capabilities that eliminate the need for selector elements in crossbar arrays for compute in memory applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_23880 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Can a ferroelectric diode be a selector-less, universal, non-volatile memory? Sarkar, Soumya Liu, Xiwen Jariwala, Deep Materials Science Applied Physics Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying current-voltage hysteretic characteristics that enable self-selecting designs critical for high-density memory. We examine progress in FeDs based on CMOS-compatible HZO, AlScN, and emerging van der Waals ferroelectrics. While FeDs demonstrate promising ON/OFF ratios and rectification capabilities, they face persistent challenges including limited write-cycling endurance, elevated operating voltages, and insufficient read currents. We provide materials-focused strategies to enhance reliability and performance of FeDs for energy-efficient electronic memory applications, with emphasis on their unique self-rectifying capabilities that eliminate the need for selector elements in crossbar arrays for compute in memory applications. |
| title | Can a ferroelectric diode be a selector-less, universal, non-volatile memory? |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2503.23880 |