Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS$_2$
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866917310876352512 |
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| author | Hua, Nelson Petocchi, Francesco Bell, Henry G. Aeppli, Gabriel Werner, Philipp Gerber, Simon |
| author_facet | Hua, Nelson Petocchi, Francesco Bell, Henry G. Aeppli, Gabriel Werner, Philipp Gerber, Simon |
| contents | Controlled stacking of van der Waals materials is a powerful tool for exploring the physics of quantum condensed matter. Given the small binding between layers, exploitation for engineering will require a breakthrough in stacking methodology, or an ability to take advantage of thicker defective stacks. Here we describe computational groundwork for the latter, using -- on account of its promise for cold memory applications -- 1$T$-TaS$_2$ as a model system. Comparing recursive Hendricks-Teller calculations and Monte Carlo simulations to published X-ray diffraction data, we obtain the key parameters describing the random stacking in mesoscopic flakes. These then regulate the electronic structures via specification of the random stacks in dynamical mean-field theory simulations. Hubbard repulsion induces strongly correlated metallic, band and Mott insulating layers, providing compelling evidence that electronic properties follow from the coexistence of more than the metallic and insulating planes associated by ordinary band theory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_24124 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS$_2$ Hua, Nelson Petocchi, Francesco Bell, Henry G. Aeppli, Gabriel Werner, Philipp Gerber, Simon Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science Controlled stacking of van der Waals materials is a powerful tool for exploring the physics of quantum condensed matter. Given the small binding between layers, exploitation for engineering will require a breakthrough in stacking methodology, or an ability to take advantage of thicker defective stacks. Here we describe computational groundwork for the latter, using -- on account of its promise for cold memory applications -- 1$T$-TaS$_2$ as a model system. Comparing recursive Hendricks-Teller calculations and Monte Carlo simulations to published X-ray diffraction data, we obtain the key parameters describing the random stacking in mesoscopic flakes. These then regulate the electronic structures via specification of the random stacks in dynamical mean-field theory simulations. Hubbard repulsion induces strongly correlated metallic, band and Mott insulating layers, providing compelling evidence that electronic properties follow from the coexistence of more than the metallic and insulating planes associated by ordinary band theory. |
| title | Effect of Interlayer Stacking on the Electronic Properties of 1$T$-TaS$_2$ |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2503.24124 |