Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
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| Format: | Preprint |
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2025
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| _version_ | 1866914166796713984 |
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| author | Estaji, Nasrin Sarsari, Ismaeil Abdolhosseini Thiering, Gergő Gali, Adam |
| author_facet | Estaji, Nasrin Sarsari, Ismaeil Abdolhosseini Thiering, Gergő Gali, Adam |
| contents | Two-dimensional (2D) materials hosting color centers and spin defects are emerging as key platforms for quantum technologies. However, the impact of reduced dimensionality on the spin-lattice relaxation time ($T_1$) of embedded defect spins -- critical for quantum applications -- remains largely unexplored. In this study, we present a systematic first-principles investigation of the negatively charged boron-vacancy (V$_{\text{B}}^-$) defect in monolayer boron nitride (BN), as well as in AA$^\prime$-stacked hexagonal BN (hBN) and ABC-stacked rhombohedral BN (rBN). Our results reveal that the $T_1$ times of V$_{\text{B}}^-$ in monolayer BN and hBN are nearly identical at room temperature. Surprisingly, despite the symmetry reduction in rBN opening additional spin relaxation channels, V$_{\text{B}}^-$ exhibits a longer $T_1$ compared to hBN. We attribute this effect to the stiffer out-of-plane phonon modes in rBN, which activate spin-phonon relaxation at reduced strength. These findings suggest that V$_{\text{B}}^-$ in rBN offers enhanced spin coherence properties, making it a promising candidate for quantum technology applications. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_00154 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes Estaji, Nasrin Sarsari, Ismaeil Abdolhosseini Thiering, Gergő Gali, Adam Quantum Physics Materials Science Two-dimensional (2D) materials hosting color centers and spin defects are emerging as key platforms for quantum technologies. However, the impact of reduced dimensionality on the spin-lattice relaxation time ($T_1$) of embedded defect spins -- critical for quantum applications -- remains largely unexplored. In this study, we present a systematic first-principles investigation of the negatively charged boron-vacancy (V$_{\text{B}}^-$) defect in monolayer boron nitride (BN), as well as in AA$^\prime$-stacked hexagonal BN (hBN) and ABC-stacked rhombohedral BN (rBN). Our results reveal that the $T_1$ times of V$_{\text{B}}^-$ in monolayer BN and hBN are nearly identical at room temperature. Surprisingly, despite the symmetry reduction in rBN opening additional spin relaxation channels, V$_{\text{B}}^-$ exhibits a longer $T_1$ compared to hBN. We attribute this effect to the stiffer out-of-plane phonon modes in rBN, which activate spin-phonon relaxation at reduced strength. These findings suggest that V$_{\text{B}}^-$ in rBN offers enhanced spin coherence properties, making it a promising candidate for quantum technology applications. |
| title | Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes |
| topic | Quantum Physics Materials Science |
| url | https://arxiv.org/abs/2504.00154 |