SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects
Fuente:
arXiv
Saved in:
| Main Author: | |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913063458832384 |
|---|---|
| author | Tung, Chien-Ting |
| author_facet | Tung, Chien-Ting |
| contents | In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysis. Localization landscape theory is introduced to provide quantum corrections to the Drift-Diffusion equation. This theory directly solves the ground state of the Schrodinger equation without further approximation, offering an efficient solution for quantum effect modeling. Additionally, a compact mobility model considering ballistic transport is developed to capture the ballistic length dependence of mobility and the velocity overshoot effect in short-channel devices. Finally, a study on a nanosheet FET using SEMIDV is conducted. I analyze the electrical characteristics of a state-of-the-art GAA/RibbonFET with a 6 nm gate length and discuss the effects of velocity overshoot and quantum confinement on currents and capacitances. A design for an ultra-short-channel transistor with a gate length down to 4.5 nm with a Vdd = 0.45 V is proposed to push the boundaries of integrated circuit technology further. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_00214 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects Tung, Chien-Ting Mesoscale and Nanoscale Physics Applied Physics In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysis. Localization landscape theory is introduced to provide quantum corrections to the Drift-Diffusion equation. This theory directly solves the ground state of the Schrodinger equation without further approximation, offering an efficient solution for quantum effect modeling. Additionally, a compact mobility model considering ballistic transport is developed to capture the ballistic length dependence of mobility and the velocity overshoot effect in short-channel devices. Finally, a study on a nanosheet FET using SEMIDV is conducted. I analyze the electrical characteristics of a state-of-the-art GAA/RibbonFET with a 6 nm gate length and discuss the effects of velocity overshoot and quantum confinement on currents and capacitances. A design for an ultra-short-channel transistor with a gate length down to 4.5 nm with a Vdd = 0.45 V is proposed to push the boundaries of integrated circuit technology further. |
| title | SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2504.00214 |