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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| Accesso online: | https://arxiv.org/abs/2504.00345 |
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| _version_ | 1866910013243523072 |
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| author | Chen, Tongtong Zhang, Wenjia Wan, Xiaobei Zhang, Xiaohan Yin, Yashi Qin, Jinghao Ma, Fengxian Song, Juntao Liu, Ying Wang, Wen-Xiao |
| author_facet | Chen, Tongtong Zhang, Wenjia Wan, Xiaobei Zhang, Xiaohan Yin, Yashi Qin, Jinghao Ma, Fengxian Song, Juntao Liu, Ying Wang, Wen-Xiao |
| contents | Silicon nanoribbons (SiNRs), characterized by a pentagonal structure composed of silicon atoms, host one-dimensional (1D) Dirac Fermions and serve as a minimalist atomic template for adsorbing various heteroatoms. Alkali-metal (AM) atoms, such as Na and K, with electronic structures comparable to those of hydrogen are of particular interest for such adsorption studies. However, the adsorption of AM atoms on SiNRs and its tunation on the properties of SiNRs have not yet been fully explored. In this study, we examined the adsorption of K atoms on high-aspect-ratio SiNRs and the resultant electronic properties using a combination of scanning tunneling microscopy (STM) and density functional theory calculations. K atoms prefer to adsorb on double- and multi-stranded SiNRs owing to the low adsorption energies at these sites. Each K atom and its three nearest Si atoms exhibit a triangular morphology resulting from charge transfer between K and Si atoms, as verified by theoretical calculations. As the K coverage of the SiNRs increased, the K atoms organize into 1D zigzag chains on the SiNRs. Moreover, K adsorption on the SiNRs was determined to be reversible. The deposition of K atoms on the SiNRs was achieved using a voltage pulse of the STM tip, without damaging the SiNRs structure. In addition, K adsorption effectively modulates the Dirac cone position of the SiNRs relative to the Fermi level. This study unveils the adsorption mechanism of AM atoms on SiNRs, providing a useful approach for heteroatom adsorption on other nanoribbons. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_00345 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | One-Dimensional Potassium Chains on Silicon Nanoribbons Chen, Tongtong Zhang, Wenjia Wan, Xiaobei Zhang, Xiaohan Yin, Yashi Qin, Jinghao Ma, Fengxian Song, Juntao Liu, Ying Wang, Wen-Xiao Mesoscale and Nanoscale Physics 06-11 Silicon nanoribbons (SiNRs), characterized by a pentagonal structure composed of silicon atoms, host one-dimensional (1D) Dirac Fermions and serve as a minimalist atomic template for adsorbing various heteroatoms. Alkali-metal (AM) atoms, such as Na and K, with electronic structures comparable to those of hydrogen are of particular interest for such adsorption studies. However, the adsorption of AM atoms on SiNRs and its tunation on the properties of SiNRs have not yet been fully explored. In this study, we examined the adsorption of K atoms on high-aspect-ratio SiNRs and the resultant electronic properties using a combination of scanning tunneling microscopy (STM) and density functional theory calculations. K atoms prefer to adsorb on double- and multi-stranded SiNRs owing to the low adsorption energies at these sites. Each K atom and its three nearest Si atoms exhibit a triangular morphology resulting from charge transfer between K and Si atoms, as verified by theoretical calculations. As the K coverage of the SiNRs increased, the K atoms organize into 1D zigzag chains on the SiNRs. Moreover, K adsorption on the SiNRs was determined to be reversible. The deposition of K atoms on the SiNRs was achieved using a voltage pulse of the STM tip, without damaging the SiNRs structure. In addition, K adsorption effectively modulates the Dirac cone position of the SiNRs relative to the Fermi level. This study unveils the adsorption mechanism of AM atoms on SiNRs, providing a useful approach for heteroatom adsorption on other nanoribbons. |
| title | One-Dimensional Potassium Chains on Silicon Nanoribbons |
| topic | Mesoscale and Nanoscale Physics 06-11 |
| url | https://arxiv.org/abs/2504.00345 |