Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films
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2025
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| author | Hu, Chenxi Mukit, Abdul Vangipuram, Vijay Gopal Thirupakuzi Chae, Christopher Hwang, Jinwoo Kash, Kathleen Zhao, Hongping |
| author_facet | Hu, Chenxi Mukit, Abdul Vangipuram, Vijay Gopal Thirupakuzi Chae, Christopher Hwang, Jinwoo Kash, Kathleen Zhao, Hongping |
| contents | Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV nitride closely lattice matched to GaN and AlN has a band gap suitable for photonic applications in the UV-C wavelength region. MgSiN2 is also a promising candidate to exhibit ferroelectricity, which has only been observed in very few nitride materials. This study builds on our previous work on the metal-organic chemical vapor deposition (MOCVD) of MgSiN2 thin films grown on GaN-on-sapphire and c-plane sapphire substrates by exploring higher growth temperature windows, resulting in higher crystalline quality and improved interfaces. Correlations between the growth conditions (Mg:Si precursor molar flow rate ratio, reactor pressure, and growth temperatures from 900C to 960C) and the resultant film quality are investigated for films grown on GaN-on-sapphire. High-resolution transmission electron microscopy (HR-TEM) reveals high-quality orthorhombic single-crystal MgSiN2, confirming successful epitaxial growth on GaN. Optical transmittance measurements indicate the direct band gap is 6.34-6.36 eV and indirect band gap is 5.77-5.81 eV, affirming the realization of an ultrawide-band gap II-IV nitride semiconductor that is structurally compatible with existing III-nitride device platforms. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_00875 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films Hu, Chenxi Mukit, Abdul Vangipuram, Vijay Gopal Thirupakuzi Chae, Christopher Hwang, Jinwoo Kash, Kathleen Zhao, Hongping Materials Science Applied Physics Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV nitride closely lattice matched to GaN and AlN has a band gap suitable for photonic applications in the UV-C wavelength region. MgSiN2 is also a promising candidate to exhibit ferroelectricity, which has only been observed in very few nitride materials. This study builds on our previous work on the metal-organic chemical vapor deposition (MOCVD) of MgSiN2 thin films grown on GaN-on-sapphire and c-plane sapphire substrates by exploring higher growth temperature windows, resulting in higher crystalline quality and improved interfaces. Correlations between the growth conditions (Mg:Si precursor molar flow rate ratio, reactor pressure, and growth temperatures from 900C to 960C) and the resultant film quality are investigated for films grown on GaN-on-sapphire. High-resolution transmission electron microscopy (HR-TEM) reveals high-quality orthorhombic single-crystal MgSiN2, confirming successful epitaxial growth on GaN. Optical transmittance measurements indicate the direct band gap is 6.34-6.36 eV and indirect band gap is 5.77-5.81 eV, affirming the realization of an ultrawide-band gap II-IV nitride semiconductor that is structurally compatible with existing III-nitride device platforms. |
| title | Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2504.00875 |