Efficient spin filtering through Fe$_4$GeTe$_2$-based van der Waals heterostructures
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arXiv
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866915222271295488 |
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| author | Davoudiniya, Masoumeh Sanyal, Biplab |
| author_facet | Davoudiniya, Masoumeh Sanyal, Biplab |
| contents | Utilizing ab initio simulations, we study the spin-dependent electronic transport characteristics within Fe$_4$GeTe$_2$-based van der Waals heterostructures. The electronic density of states for both free-standing and device-configured Fe$_4$GeTe$_2$ (F4GT) confirms its ferromagnetic metallic nature and reveals a weak interface interaction between F4GT and PtTe$_2$ electrodes, enabling efficient spin filtering. We observe a decrease in the magnetic anisotropy energy of F4GT in the device configuration, indicating reduced stability of magnetic moments and heightened sensitivity to external conditions. The transmission eigenstates of PtTe$_2$/ monolayer F4GT/PtTe$_2$ heterostructures demonstrate interference patterns affected by relative phases and localization, notably different in the spin-up and spin-down channels. The ballistic transport through a double-layer F4GT with a ferromagnetic configuration sandwiched between two PtTe$_2$ electrodes is predicted to exhibit an impressive spin polarization of 97$\%$ with spin-up electrons exhibiting higher transmission probability than spin-down electrons. Moreover, we investigate the spin transport properties of Fe$_4$GeTe$_2$/GaTe/Fe$_4$GeTe$_2$ van der Waals heterostructures sandwiched between PtTe$_2$ electrodes to explore their potential as magnetic tunnel junctions (MTJs) in spintronic devices. The inclusion of GaTe as a 2D semiconducting spacer between F4GT layers results in a tunnel magnetoresistance (TMR) of 487$\%$ at low bias and decreases with increasing bias voltage. In general, our findings underscore the potential of F4GT / GaTe / F4GT heterostructures to advance spintronic devices based on van der Waals materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_00935 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Efficient spin filtering through Fe$_4$GeTe$_2$-based van der Waals heterostructures Davoudiniya, Masoumeh Sanyal, Biplab Mesoscale and Nanoscale Physics Materials Science Computational Physics Utilizing ab initio simulations, we study the spin-dependent electronic transport characteristics within Fe$_4$GeTe$_2$-based van der Waals heterostructures. The electronic density of states for both free-standing and device-configured Fe$_4$GeTe$_2$ (F4GT) confirms its ferromagnetic metallic nature and reveals a weak interface interaction between F4GT and PtTe$_2$ electrodes, enabling efficient spin filtering. We observe a decrease in the magnetic anisotropy energy of F4GT in the device configuration, indicating reduced stability of magnetic moments and heightened sensitivity to external conditions. The transmission eigenstates of PtTe$_2$/ monolayer F4GT/PtTe$_2$ heterostructures demonstrate interference patterns affected by relative phases and localization, notably different in the spin-up and spin-down channels. The ballistic transport through a double-layer F4GT with a ferromagnetic configuration sandwiched between two PtTe$_2$ electrodes is predicted to exhibit an impressive spin polarization of 97$\%$ with spin-up electrons exhibiting higher transmission probability than spin-down electrons. Moreover, we investigate the spin transport properties of Fe$_4$GeTe$_2$/GaTe/Fe$_4$GeTe$_2$ van der Waals heterostructures sandwiched between PtTe$_2$ electrodes to explore their potential as magnetic tunnel junctions (MTJs) in spintronic devices. The inclusion of GaTe as a 2D semiconducting spacer between F4GT layers results in a tunnel magnetoresistance (TMR) of 487$\%$ at low bias and decreases with increasing bias voltage. In general, our findings underscore the potential of F4GT / GaTe / F4GT heterostructures to advance spintronic devices based on van der Waals materials. |
| title | Efficient spin filtering through Fe$_4$GeTe$_2$-based van der Waals heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science Computational Physics |
| url | https://arxiv.org/abs/2504.00935 |