Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909583952314368 |
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| author | Shin, Seungheon Liddy, Kyle Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth |
| author_facet | Shin, Seungheon Liddy, Kyle Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth |
| contents | We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_01291 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures Shin, Seungheon Liddy, Kyle Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Rajan, Siddharth Materials Science Applied Physics We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs. |
| title | Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2504.01291 |