Copertina

High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBi$_2$Te$_4$ thin films

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Li, Jiaheng, Wu, Quansheng, Weng, Hongming
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Mesoscale and Nanoscale Physics Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films
di: Li, Jiaheng, et al.
Pubblicazione: (2025)

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy
di: Bai, Yunhe, et al.
Pubblicazione: (2024)

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7
di: Wang, Shaoyu, et al.
Pubblicazione: (2024)

Magnetic criticality and magnetocaloric response in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$
di: Firdosh, Nazma, et al.
Pubblicazione: (2026)

An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi$_{2}$Te$_{4}$
di: Li, Zeyu, et al.
Pubblicazione: (2024)

Demonstration of robust chiral edge transport in Chern insulator MnBi2Te4 devices with engineered geometric defects
di: Wang, Pinyuan, et al.
Pubblicazione: (2026)

Observation of topological Anderson Chern insulator phase in MnBi$_4$Te$_7$ monolayer
di: Wang, Anqi, et al.
Pubblicazione: (2025)

Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4
di: Guo, Zhongxun, et al.
Pubblicazione: (2025)

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$
di: Li, Qile, et al.
Pubblicazione: (2023)

Atomic Scale Quantum Anomalous Hall Effect in Monolayer Graphene/$\rm MnBi_{2}Te_{4}$ Heterostructure
di: Yao, Yueh-Ting, et al.
Pubblicazione: (2024)

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
di: Chen, Bo, et al.
Pubblicazione: (2024)

Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$
di: Wang, Yongqian, et al.
Pubblicazione: (2024)

Stacking-dependent Electronic and Topological Properties in van der Waals Antiferromagnet MnBi$_2$Te$_4$ Films
di: Li, Jiaheng, et al.
Pubblicazione: (2025)

Prediction of High-Temperature Half Quantum Anomalous Hall Effect in a Semi-magnetic Topological Insulator of MnBi$_2$Te$_4$/Sb$_2$Te$_3$
di: Muzaffar, M. U., et al.
Pubblicazione: (2025)

Pressure-tunable phase transitions in atomically thin Chern insulator MnBi$_2$Te$_4$
di: Marffy, Albin, et al.
Pubblicazione: (2025)

Observation of the Axion quasiparticle in 2D MnBi$_2$Te$_4$
di: Qiu, Jian-Xiang, et al.
Pubblicazione: (2025)

Quantum anomalous Hall effect with high Chern number in two dimensional ferromagnets Ti2TeSO
di: Feng, Panjun, et al.
Pubblicazione: (2025)

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
di: Li, Yuanzhao, et al.
Pubblicazione: (2024)

Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells
di: Liang, Chenhao, et al.
Pubblicazione: (2025)

Topological Magneto-Optical Switching in Even-Layered MnBi$_2$Te$_4$
di: Sattar, Shahid, et al.
Pubblicazione: (2026)

Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films
di: Lei, Chao, et al.
Pubblicazione: (2023)

RKKY signatures as a probe for intrinsic magnetism and AI/QAH phase discrimination in MnBi$_2$Te$_4$ films
di: Li, Ya-Xi, et al.
Pubblicazione: (2026)

Broadband photoresponse enhancement by band engineering in Sb-doped MnBi2Te4
di: Xu, Zixuan, et al.
Pubblicazione: (2025)

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films
di: Shi, Yang, et al.
Pubblicazione: (2024)

Axion insulator, Weyl points, quantum anomalous Hall effect and magnetic topological phase transition in Eu3In2As4
di: Yao, Jingyu, et al.
Pubblicazione: (2024)

Single-domain imaging in topological insulator Bi2Te3 thin films
di: Yi, David H., et al.
Pubblicazione: (2024)

Quantized Magneto-Terahertz Effects in the Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Thin Films
di: Han, Xingyue, et al.
Pubblicazione: (2025)

Antiferromagnetic Chiral Bobber Formation and Topological Proximity Effect in MnBi2Te4
di: Xu, Y., et al.
Pubblicazione: (2025)

Surface Reconstructions in Thin-Films of Magnetic Topological Insulator MnBi$_2$Te$_4$
di: Sattar, Shahid, et al.
Pubblicazione: (2025)

Lossless Spin-Orbit Torque in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
di: Tang, Junyu, et al.
Pubblicazione: (2023)

Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene
di: Liu, Naitian, et al.
Pubblicazione: (2025)

Chern-Selective multi-valley Flat Bands in Twisted Mono-Bilayer and Mono-Trilayer MoTe$_2$
di: Qi, Ziyue, et al.
Pubblicazione: (2025)

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$
di: Li, Yaoxin, et al.
Pubblicazione: (2023)

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films
di: Yuan, Wei, et al.
Pubblicazione: (2024)

Defect-induced displacement of topological surface state in quantum magnet MnBi$_2$Te$_4$
di: Lüpke, Felix, et al.
Pubblicazione: (2025)

Magneto-optical Response of 5-SL MnBi$_2$Te$_4$ in Spin-Flip States
di: Sattar, Shahid, et al.
Pubblicazione: (2026)

Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$
di: Yang, Shiqi, et al.
Pubblicazione: (2024)

Unveiling the impact of anti-site defects in magnetic transitions of few-layer MnBi2Te4 by operando heating
di: Chen, Xinyu, et al.
Pubblicazione: (2026)

DPmoire: A tool for constructing accurate machine learning force fields in moiré systems
di: Liu, Jiaxuan, et al.
Pubblicazione: (2024)

Spectroscopic evidence of intra-unit-cell charge redistribution in charge-neutral magnetic topological insulator Sb-doped MnBi6Te10
di: Nguyen, Khanh Duy, et al.
Pubblicazione: (2025)