Optical and magnetic response by design in GaAs quantum dots
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Schimpf, Christian Garcia Jr., Ailton J. Koong, Zhe X. Nguyen, Giang N. Niekamp, Lukas L. Appel, Martin Hayhurst Hassanen, Ahmed Waller, James Karli, Yusuf da Silva, Saimon Philipe Covre Ritzmann, Julian Babin, Hans-Georg Wieck, Andreas D. Pishchagin, Anton Margaria, Nico Au, Ti-Huong Bossier, Sebastien Morassi, Martina Lemaitre, Aristide Senellart, Pascale Somaschi, Niccolo Ludwig, Arne Warburton, Richard Atatüre, Mete Rastelli, Armando Gawełczyk, Michał Gangloff, Dorian |
| author_facet | Schimpf, Christian Garcia Jr., Ailton J. Koong, Zhe X. Nguyen, Giang N. Niekamp, Lukas L. Appel, Martin Hayhurst Hassanen, Ahmed Waller, James Karli, Yusuf da Silva, Saimon Philipe Covre Ritzmann, Julian Babin, Hans-Georg Wieck, Andreas D. Pishchagin, Anton Margaria, Nico Au, Ti-Huong Bossier, Sebastien Morassi, Martina Lemaitre, Aristide Senellart, Pascale Somaschi, Niccolo Ludwig, Arne Warburton, Richard Atatüre, Mete Rastelli, Armando Gawełczyk, Michał Gangloff, Dorian |
| contents | Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These properties are notoriously difficult to design in many solid-state systems, where spin-orbit coupling and the crystalline environment for each qubit create inhomogeneity of electronic g-factors and optically active states. Here, we show that GaAs quantum dots (QDs) obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k.p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission. Remarkably, our measurements and simulations track the in-plane electron g-factors through a zero-crossing from -0.1 to 0.3 and linear optical dipole moment orientations fully determined by an external magnetic field. The robustness of our results demonstrates the capability to design - prior to growth - the properties of a spin qubit and its tunable optical interface best adapted to a target magnetic and photonic environment with direct application for high-quality spin-photon entanglement. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_02355 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Optical and magnetic response by design in GaAs quantum dots Schimpf, Christian Garcia Jr., Ailton J. Koong, Zhe X. Nguyen, Giang N. Niekamp, Lukas L. Appel, Martin Hayhurst Hassanen, Ahmed Waller, James Karli, Yusuf da Silva, Saimon Philipe Covre Ritzmann, Julian Babin, Hans-Georg Wieck, Andreas D. Pishchagin, Anton Margaria, Nico Au, Ti-Huong Bossier, Sebastien Morassi, Martina Lemaitre, Aristide Senellart, Pascale Somaschi, Niccolo Ludwig, Arne Warburton, Richard Atatüre, Mete Rastelli, Armando Gawełczyk, Michał Gangloff, Dorian Quantum Physics Mesoscale and Nanoscale Physics Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These properties are notoriously difficult to design in many solid-state systems, where spin-orbit coupling and the crystalline environment for each qubit create inhomogeneity of electronic g-factors and optically active states. Here, we show that GaAs quantum dots (QDs) obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k.p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission. Remarkably, our measurements and simulations track the in-plane electron g-factors through a zero-crossing from -0.1 to 0.3 and linear optical dipole moment orientations fully determined by an external magnetic field. The robustness of our results demonstrates the capability to design - prior to growth - the properties of a spin qubit and its tunable optical interface best adapted to a target magnetic and photonic environment with direct application for high-quality spin-photon entanglement. |
| title | Optical and magnetic response by design in GaAs quantum dots |
| topic | Quantum Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.02355 |