Native defects, hydrogen impurities, and metal dopants in CeO$_2$
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arXiv
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| Auteurs principaux: | , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916943762554880 |
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| author | Hoang, Khang Johannes, Michelle D. |
| author_facet | Hoang, Khang Johannes, Michelle D. |
| contents | Ceria (CeO$_2$) is a material of significant technological importance. A detailed understanding of the material's defect physics and chemistry is key to understanding and optimizing its properties. Here, we report a hybrid density-functional study of native point defects, hydrogen impurities, and metal dopants in CeO$_2$. We find that electron polarons ($η_{\rm Ce}^-$) and oxygen vacancies ($V_{\rm O}^{2+}$) are the dominant native defects under conditions ranging from extreme oxidizing to highly reducing. Hydrogen is stable either in the hydroxyl (H$_i^+$) or hydride (H$_{\rm O}^+$) structure but the substitutional H$_{\rm O}^+$ is energetically more favorable than H$_i^+$ only under highly reducing conditions. The interstitial H$_i^+$ is highly mobile in the bulk. Yttrium (Y) is energetically most favorable at the substitutional Ce site. Copper (Cu) and nickel (Ni) can be incorporated at the substitutional site and/or an interstitial site, depending on actual conditions during preparation, and the dopants can exist in different charge and spin states. In light of the results, we discuss electronic and ionic conduction and the effects of metal doping on the formation of electron polarons and oxygen vacancies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_02595 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Native defects, hydrogen impurities, and metal dopants in CeO$_2$ Hoang, Khang Johannes, Michelle D. Materials Science Ceria (CeO$_2$) is a material of significant technological importance. A detailed understanding of the material's defect physics and chemistry is key to understanding and optimizing its properties. Here, we report a hybrid density-functional study of native point defects, hydrogen impurities, and metal dopants in CeO$_2$. We find that electron polarons ($η_{\rm Ce}^-$) and oxygen vacancies ($V_{\rm O}^{2+}$) are the dominant native defects under conditions ranging from extreme oxidizing to highly reducing. Hydrogen is stable either in the hydroxyl (H$_i^+$) or hydride (H$_{\rm O}^+$) structure but the substitutional H$_{\rm O}^+$ is energetically more favorable than H$_i^+$ only under highly reducing conditions. The interstitial H$_i^+$ is highly mobile in the bulk. Yttrium (Y) is energetically most favorable at the substitutional Ce site. Copper (Cu) and nickel (Ni) can be incorporated at the substitutional site and/or an interstitial site, depending on actual conditions during preparation, and the dopants can exist in different charge and spin states. In light of the results, we discuss electronic and ionic conduction and the effects of metal doping on the formation of electron polarons and oxygen vacancies. |
| title | Native defects, hydrogen impurities, and metal dopants in CeO$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.02595 |