A silicon spin vacuum: isotopically enriched $^{28}$silicon-on-insulator and $^{28}$silicon from ultra-high fluence ion implantation

Documenti analoghi

• Room temperature Purcell enhanced single erbium ions in silicon-carbide-on-insulator microring resonators
  di: Bader, Joshua, et al.
  Pubblicazione: (2026)
• Improved placement precision of implanted donor spin qubits in silicon using molecule ions
  di: Holmes, Danielle, et al.
  Pubblicazione: (2023)
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
  di: Lyasota, Alexey, et al.
  Pubblicazione: (2025)
• Electrically detected magnetic resonance of $^{75}$As magnetic clock transitions in silicon
  di: Acharya, Ravi, et al.
  Pubblicazione: (2026)
• Self-ion implantation and structural relaxation in amorphous silicon
  di: Gibson, J. M., et al.
  Pubblicazione: (2025)