A Reconfigurable Time-Domain In-Memory Computing Macro using FeFET-Based CAM with Multilevel Delay Calibration in 28 nm CMOS

Fuente: arXiv
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Autores principales: Mattar, Jeries, Dahan, Mor M., Dunkel, Stefan, Mulaosmanovic, Halid, Beernink, Gunda, Beyer, Sven, Yalon, Eilam, Wainstein, Nicolás
Formato: Preprint
Publicado: 2025
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author Mattar, Jeries
Dahan, Mor M.
Dunkel, Stefan
Mulaosmanovic, Halid
Beernink, Gunda
Beyer, Sven
Yalon, Eilam
Wainstein, Nicolás
author_facet Mattar, Jeries
Dahan, Mor M.
Dunkel, Stefan
Mulaosmanovic, Halid
Beernink, Gunda
Beyer, Sven
Yalon, Eilam
Wainstein, Nicolás
contents Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated and reconfigurable TD-nvIMC macro, fabricated in 28 nm CMOS, that combines a ferroelectric FET (FeFET)-based content-addressable memory array, a cascaded delay element chain, and a time-to-digital converter. The architecture supports binary multiply-and-accumulate (MAC) operations using XOR- and AND-based matching, as well as in-memory Boolean logic and arithmetic functions. Sub-nanosecond MAC resolution is achieved through experimentally demonstrated 550 ps delay steps, representing a 2000$\times$ improvement over prior FeFET TD-nvIMC work, enabled by multilevel-state calibration with $\leq$ 100 ps resolution. Write-disturb resilience is ensured via isolated triple-well bulks. The proposed macro achieves a measured throughput of 222.2 MOPS/cell and energy efficiency of 1887 TOPS/W at 0.85 V, establishing a viable path toward scalable, energy-efficient TD-nvIMC accelerators.
format Preprint
id arxiv_https___arxiv_org_abs_2504_03925
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle A Reconfigurable Time-Domain In-Memory Computing Macro using FeFET-Based CAM with Multilevel Delay Calibration in 28 nm CMOS
Mattar, Jeries
Dahan, Mor M.
Dunkel, Stefan
Mulaosmanovic, Halid
Beernink, Gunda
Beyer, Sven
Yalon, Eilam
Wainstein, Nicolás
Emerging Technologies
Hardware Architecture
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated and reconfigurable TD-nvIMC macro, fabricated in 28 nm CMOS, that combines a ferroelectric FET (FeFET)-based content-addressable memory array, a cascaded delay element chain, and a time-to-digital converter. The architecture supports binary multiply-and-accumulate (MAC) operations using XOR- and AND-based matching, as well as in-memory Boolean logic and arithmetic functions. Sub-nanosecond MAC resolution is achieved through experimentally demonstrated 550 ps delay steps, representing a 2000$\times$ improvement over prior FeFET TD-nvIMC work, enabled by multilevel-state calibration with $\leq$ 100 ps resolution. Write-disturb resilience is ensured via isolated triple-well bulks. The proposed macro achieves a measured throughput of 222.2 MOPS/cell and energy efficiency of 1887 TOPS/W at 0.85 V, establishing a viable path toward scalable, energy-efficient TD-nvIMC accelerators.
title A Reconfigurable Time-Domain In-Memory Computing Macro using FeFET-Based CAM with Multilevel Delay Calibration in 28 nm CMOS
topic Emerging Technologies
Hardware Architecture
url https://arxiv.org/abs/2504.03925