Slide and Twist: Manipulating Polarization in Multilayer Hexagonal Boron-Nitride
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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908302750777344 |
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| author | Vizcaya, Sanber Riffo, Felipe Perez Florez, Juan M. Morell, Eric Súarez |
| author_facet | Vizcaya, Sanber Riffo, Felipe Perez Florez, Juan M. Morell, Eric Súarez |
| contents | This study explores the world of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), aiming to control out-of-plane polarization. By investigating the effects of sliding single or dual layers in various hBN stacking configurations, we uncover methods for reversing polarization with energy barriers between 5 and 30 meV/f.u., making these methods experimentally viable. Our results show that single-interface sliding is more energetically favorable, with lower barriers compared to multiple interfaces. Certain pathways reveal stable polarization plateaus, where polarization remains constant during specific sliding phases, promising robust polarization control. Moreover, rotated multilayer structures maintain consistent net out-of-plane polarization across different rotation angles. In trilayer ABT structures, rotating the top layer and sliding the bottom layer can reverse polarization, expanding device design possibilities. While the primary focus is on hBN, similar phenomena in hGaN suggest broader applicability for this class of polar materials. The identified energy barriers support the feasibility of fabricating devices based on these multilayer structures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_04004 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Slide and Twist: Manipulating Polarization in Multilayer Hexagonal Boron-Nitride Vizcaya, Sanber Riffo, Felipe Perez Florez, Juan M. Morell, Eric Súarez Materials Science Chemical Physics This study explores the world of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), aiming to control out-of-plane polarization. By investigating the effects of sliding single or dual layers in various hBN stacking configurations, we uncover methods for reversing polarization with energy barriers between 5 and 30 meV/f.u., making these methods experimentally viable. Our results show that single-interface sliding is more energetically favorable, with lower barriers compared to multiple interfaces. Certain pathways reveal stable polarization plateaus, where polarization remains constant during specific sliding phases, promising robust polarization control. Moreover, rotated multilayer structures maintain consistent net out-of-plane polarization across different rotation angles. In trilayer ABT structures, rotating the top layer and sliding the bottom layer can reverse polarization, expanding device design possibilities. While the primary focus is on hBN, similar phenomena in hGaN suggest broader applicability for this class of polar materials. The identified energy barriers support the feasibility of fabricating devices based on these multilayer structures. |
| title | Slide and Twist: Manipulating Polarization in Multilayer Hexagonal Boron-Nitride |
| topic | Materials Science Chemical Physics |
| url | https://arxiv.org/abs/2504.04004 |