Feedback suppression in 405 nm superluminescent diodes via engineered scattering

Fuente: arXiv
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Main Authors: Pacheco, Andrea Martinez, Consoli, Antonio, Lopez, Cefe
Format: Preprint
Published: 2025
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author Pacheco, Andrea Martinez
Consoli, Antonio
Lopez, Cefe
author_facet Pacheco, Andrea Martinez
Consoli, Antonio
Lopez, Cefe
contents Superluminescent diodes are promising devices for applications in which low coherence, high efficiency, small foot-print and good optoelectronic integration are required. Blue emitting superluminescent diodes with good performances and easy fabrication process are sought for next generation solid state lighting devices, micro-projectors and displays. These devices are laser diodes in which the optical feedback is inhibited, and lasing action avoided. Conventional fabrication processes minimize optical feedback by ad-hoc designs, e.g. anti-reflection coating, tilted waveguide or absorber sections, requiring specific fabrication steps. In this work, we propose and demonstrate the introduction of scattering defects in the device waveguide as a method for feedback inhibition. By performing pulsed laser ablation on a commercial 405 nm GaN laser diode we demonstrate a superluminescent diode, featuring a maximum output power of 2 mW and a spectral width of 5.7 nm.
format Preprint
id arxiv_https___arxiv_org_abs_2504_04272
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Feedback suppression in 405 nm superluminescent diodes via engineered scattering
Pacheco, Andrea Martinez
Consoli, Antonio
Lopez, Cefe
Optics
Superluminescent diodes are promising devices for applications in which low coherence, high efficiency, small foot-print and good optoelectronic integration are required. Blue emitting superluminescent diodes with good performances and easy fabrication process are sought for next generation solid state lighting devices, micro-projectors and displays. These devices are laser diodes in which the optical feedback is inhibited, and lasing action avoided. Conventional fabrication processes minimize optical feedback by ad-hoc designs, e.g. anti-reflection coating, tilted waveguide or absorber sections, requiring specific fabrication steps. In this work, we propose and demonstrate the introduction of scattering defects in the device waveguide as a method for feedback inhibition. By performing pulsed laser ablation on a commercial 405 nm GaN laser diode we demonstrate a superluminescent diode, featuring a maximum output power of 2 mW and a spectral width of 5.7 nm.
title Feedback suppression in 405 nm superluminescent diodes via engineered scattering
topic Optics
url https://arxiv.org/abs/2504.04272