Interplay Between Structural Defects and Charge Transport Dynamics in MA and FA Modified CsSnI3 Thin Film Semiconductors
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Segal, Gleb V. Zarudnyaya, Anna A. Vasilev, Anton A. Morozov, Andrey P. Ivanova, Alexandra S. Luchnikov, Lev O. Yurchuk, Sergey Yu. Gostishchev, Pavel A. Saranin, Danila S. |
| author_facet | Segal, Gleb V. Zarudnyaya, Anna A. Vasilev, Anton A. Morozov, Andrey P. Ivanova, Alexandra S. Luchnikov, Lev O. Yurchuk, Sergey Yu. Gostishchev, Pavel A. Saranin, Danila S. |
| contents | Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device performance. Cation engineering of perovskite molecule was considered as an effective strategy to tailor the structural properties and suppress the degradation processes. However, molecular engineering demands a thorough analysis of defect behavior, as it can influence ionic motion, recombination dynamics, and capacitive effects. The effective implementation of CsSnI3 in energy conversion devices requires careful consideration of the specific properties of thin films electrical conductivity, Seebeck coefficient, power factor, as well as electronic transients, and charge transport in the device structures. In this work, we performed a complex investigation for modified CsSnI3 through cation substitution with methyl ammonium (MA) and formamidinium (FA). Our findings highlight a complex interplay between electrical parameters of the bare thin films and stability of the devices (p-i-n diodes) after thermal stress. FA-CsSnI3 showed beneficial results for stabilization under elevated temperatures with improved non-ideality factor in diode structures, enhanced shunt properties and reduced trapping. The photo-induced voltage relaxation spectroscopy performed for MA-CsSnI3 showed relevant traps concentration of 1016 cm-3 with activation energy of 0.52 eV(210K) likely attributed to Sn atom defect. The obtained results are deeply analyzed and discussed. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_04806 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Interplay Between Structural Defects and Charge Transport Dynamics in MA and FA Modified CsSnI3 Thin Film Semiconductors Segal, Gleb V. Zarudnyaya, Anna A. Vasilev, Anton A. Morozov, Andrey P. Ivanova, Alexandra S. Luchnikov, Lev O. Yurchuk, Sergey Yu. Gostishchev, Pavel A. Saranin, Danila S. Materials Science Applied Physics Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device performance. Cation engineering of perovskite molecule was considered as an effective strategy to tailor the structural properties and suppress the degradation processes. However, molecular engineering demands a thorough analysis of defect behavior, as it can influence ionic motion, recombination dynamics, and capacitive effects. The effective implementation of CsSnI3 in energy conversion devices requires careful consideration of the specific properties of thin films electrical conductivity, Seebeck coefficient, power factor, as well as electronic transients, and charge transport in the device structures. In this work, we performed a complex investigation for modified CsSnI3 through cation substitution with methyl ammonium (MA) and formamidinium (FA). Our findings highlight a complex interplay between electrical parameters of the bare thin films and stability of the devices (p-i-n diodes) after thermal stress. FA-CsSnI3 showed beneficial results for stabilization under elevated temperatures with improved non-ideality factor in diode structures, enhanced shunt properties and reduced trapping. The photo-induced voltage relaxation spectroscopy performed for MA-CsSnI3 showed relevant traps concentration of 1016 cm-3 with activation energy of 0.52 eV(210K) likely attributed to Sn atom defect. The obtained results are deeply analyzed and discussed. |
| title | Interplay Between Structural Defects and Charge Transport Dynamics in MA and FA Modified CsSnI3 Thin Film Semiconductors |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2504.04806 |