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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.05280 |
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| _version_ | 1866910905505153024 |
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| author | Yang, Wei Wang, Xinhe Liu, Jianing Zhou, Daming Lin, Xiaoyang Zhang, Ke Damas, Heloise Wang, Xinyue Lu, Xianyang Yang, Haozhe Mangin, Stephane Petit-Watelot, Sebastien Hehn, Michel Fert, Albert Rojas-Sanchez, Juan-Carlos Zhao, Weisheng |
| author_facet | Yang, Wei Wang, Xinhe Liu, Jianing Zhou, Daming Lin, Xiaoyang Zhang, Ke Damas, Heloise Wang, Xinyue Lu, Xianyang Yang, Haozhe Mangin, Stephane Petit-Watelot, Sebastien Hehn, Michel Fert, Albert Rojas-Sanchez, Juan-Carlos Zhao, Weisheng |
| contents | Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $Ω^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_05280 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization Yang, Wei Wang, Xinhe Liu, Jianing Zhou, Daming Lin, Xiaoyang Zhang, Ke Damas, Heloise Wang, Xinyue Lu, Xianyang Yang, Haozhe Mangin, Stephane Petit-Watelot, Sebastien Hehn, Michel Fert, Albert Rojas-Sanchez, Juan-Carlos Zhao, Weisheng Mesoscale and Nanoscale Physics Materials Science Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $Ω^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies. |
| title | Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2504.05280 |