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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2504.05780 |
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| _version_ | 1866909940742881280 |
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| author | Xu, Jingkai Zheng, Dongxing Tang, Meng Liu, Chen He, Bin Yang, Man Li, Hao Li, Yan Chen, Aitian Zhang, Senfu Qiu, Ziqiang Zhang, Xixiang |
| author_facet | Xu, Jingkai Zheng, Dongxing Tang, Meng Liu, Chen He, Bin Yang, Man Li, Hao Li, Yan Chen, Aitian Zhang, Senfu Qiu, Ziqiang Zhang, Xixiang |
| contents | Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals such as Ti, Cr, and Zr, broadening the scope of spin-orbit torque (SOT). In particular, the orbital Hall effect, which arises independently of spin-obit coupling, has shown potential for enhancing torque efficiency in spintronic devices. However, the direct integration of orbital current into magnetic random-access memory (MRAM) remains unexplored. In this work, we design a light metal/heavy metal/ferromagnet multilayer structure and experimentally demonstrate magnetization switching by orbital current. Furthermore, we have realized a robust SOT-MRAM cell by incorporating a reference layer that is pinned by a synthetic antiferromagnetic structure. We observed a tunnel magnetoresistance of 66%, evident in both magnetic field and current-driven switching processes. Our findings underscore the potential for employing orbital current in designing next-generation spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_05780 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Orbital Current-Driven Magnetization Switching in a Magnetic Tunnel Junction Xu, Jingkai Zheng, Dongxing Tang, Meng Liu, Chen He, Bin Yang, Man Li, Hao Li, Yan Chen, Aitian Zhang, Senfu Qiu, Ziqiang Zhang, Xixiang Materials Science Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals such as Ti, Cr, and Zr, broadening the scope of spin-orbit torque (SOT). In particular, the orbital Hall effect, which arises independently of spin-obit coupling, has shown potential for enhancing torque efficiency in spintronic devices. However, the direct integration of orbital current into magnetic random-access memory (MRAM) remains unexplored. In this work, we design a light metal/heavy metal/ferromagnet multilayer structure and experimentally demonstrate magnetization switching by orbital current. Furthermore, we have realized a robust SOT-MRAM cell by incorporating a reference layer that is pinned by a synthetic antiferromagnetic structure. We observed a tunnel magnetoresistance of 66%, evident in both magnetic field and current-driven switching processes. Our findings underscore the potential for employing orbital current in designing next-generation spintronic devices. |
| title | Orbital Current-Driven Magnetization Switching in a Magnetic Tunnel Junction |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.05780 |