Response to an external field of a generalized Langevin equation with stochastic resetting of the memory kernel

Fuente: arXiv
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Main Authors: Jolakoski, Petar, Basnarkov, Lasko, Kocarev, Ljupco, Popovska-Mitrovikj, Aleksandra, Bakeva, Verica, Sandev, Trifce
Format: Preprint
Published: 2025
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author Jolakoski, Petar
Basnarkov, Lasko
Kocarev, Ljupco
Popovska-Mitrovikj, Aleksandra
Bakeva, Verica
Sandev, Trifce
author_facet Jolakoski, Petar
Basnarkov, Lasko
Kocarev, Ljupco
Popovska-Mitrovikj, Aleksandra
Bakeva, Verica
Sandev, Trifce
contents We study a generalized Langevin equation (GLE) framework that incorporates stochastic resetting of a truncation power-law memory kernel. The inclusion of stochastic resetting enables the emergence of resonance phenomena even in parameter regimes where conventional settings (without resetting) do not exhibit such behavior. Specifically, we explore the response of the system to an external field under three scenarios: (i) a free particle, (ii) a particle in a harmonic potential, and (iii) the effect of truncation in the memory kernel. In each case, the primary focus is on understanding how the resetting mechanism interacts with standard parameters to induce stochastic resonance. In addition, we explore the effect of resetting on the dielectric loss.
format Preprint
id arxiv_https___arxiv_org_abs_2504_06687
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Response to an external field of a generalized Langevin equation with stochastic resetting of the memory kernel
Jolakoski, Petar
Basnarkov, Lasko
Kocarev, Ljupco
Popovska-Mitrovikj, Aleksandra
Bakeva, Verica
Sandev, Trifce
Statistical Mechanics
We study a generalized Langevin equation (GLE) framework that incorporates stochastic resetting of a truncation power-law memory kernel. The inclusion of stochastic resetting enables the emergence of resonance phenomena even in parameter regimes where conventional settings (without resetting) do not exhibit such behavior. Specifically, we explore the response of the system to an external field under three scenarios: (i) a free particle, (ii) a particle in a harmonic potential, and (iii) the effect of truncation in the memory kernel. In each case, the primary focus is on understanding how the resetting mechanism interacts with standard parameters to induce stochastic resonance. In addition, we explore the effect of resetting on the dielectric loss.
title Response to an external field of a generalized Langevin equation with stochastic resetting of the memory kernel
topic Statistical Mechanics
url https://arxiv.org/abs/2504.06687