Layer-dependent field-free switching of Néel vector in a van der Waals antiferromagnet
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866915234602549248 |
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| author | Guo, Haoran Lin, Zhongchong Lu, Jinhao Yun, Chao Han, Guanghui Sun, Shoutong Wu, Yu Yang, Wenyun Xiao, Dongdong Zhu, Zhifeng Peng, Licong Ye, Yu Hou, Yanglong Yang, Jinbo Luo, Zhaochu |
| author_facet | Guo, Haoran Lin, Zhongchong Lu, Jinhao Yun, Chao Han, Guanghui Sun, Shoutong Wu, Yu Yang, Wenyun Xiao, Dongdong Zhu, Zhifeng Peng, Licong Ye, Yu Hou, Yanglong Yang, Jinbo Luo, Zhaochu |
| contents | Two-dimensional antiferromagnets, combining the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform for exploring emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets - the cornerstone of antiferromagnetic spintronics - remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet $(Fe,Co)_3$$GaTe_2$ (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_06764 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Layer-dependent field-free switching of Néel vector in a van der Waals antiferromagnet Guo, Haoran Lin, Zhongchong Lu, Jinhao Yun, Chao Han, Guanghui Sun, Shoutong Wu, Yu Yang, Wenyun Xiao, Dongdong Zhu, Zhifeng Peng, Licong Ye, Yu Hou, Yanglong Yang, Jinbo Luo, Zhaochu Mesoscale and Nanoscale Physics Two-dimensional antiferromagnets, combining the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform for exploring emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets - the cornerstone of antiferromagnetic spintronics - remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet $(Fe,Co)_3$$GaTe_2$ (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices. |
| title | Layer-dependent field-free switching of Néel vector in a van der Waals antiferromagnet |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.06764 |