Oxygen-vacancy quantum spin defects in silicon carbide
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866917353778839552 |
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| author | Chen, Yu Zhang, Qi Liu, Mingzhe Wu, Junda Liu, Jinpeng Zhao, Xin Zhou, Jingyang Yu, Pei Lin, Shaochun Teng, Yuanhong Yu, Wancheng Wang, Ya Duan, Changkui Shi, Fazhan |
| author_facet | Chen, Yu Zhang, Qi Liu, Mingzhe Wu, Junda Liu, Jinpeng Zhao, Xin Zhou, Jingyang Yu, Pei Lin, Shaochun Teng, Yuanhong Yu, Wancheng Wang, Ya Duan, Changkui Shi, Fazhan |
| contents | Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is essential for understanding functionality and enabling controlled engineering. In 4H-SiC, the PL5 and PL6 centers have long been recognized for their exceptional charge stability and room-temperature optically detected magnetic resonance (ODMR) performance, but their structural origin has remained elusive for over a decade. Here, we provide direct evidence for their oxygen-vacancy (${\rm O_C V_{Si}}$) origins through a combined chemical and isotopic control strategy. Under oxygen ion implantation, we observe over tenfold enhancement in the yield of PL5 and PL6 compared to nitrogen ion implantation. Furthermore, implantation with $^{17}{\rm O}$ ions produces PL5 and PL6 defects that exhibit a characteristic six-fold $^{17}{\rm O}$ hyperfine splitting in their ODMR spectra. These results affirm PL6 as the ${\rm O_C V_{Si}}$ defect in the $hh$ configuration. For PL5, the oxygen-related evidence, together with \textit{ab initio} calculations and additional measurements of the zero-field splitting and hyperfine structure, establishes it as the ${\rm O_C V_{Si}}$ defect in the $kh$ configuration. This unambiguous structural identification, achieved through materials-level chemical control, provides the microscopic foundation for deterministic engineering of these defects, paving the way for scalable photonic devices and high-sensitivity ensemble quantum sensors based on oxygen-vacancy centers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_07558 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Oxygen-vacancy quantum spin defects in silicon carbide Chen, Yu Zhang, Qi Liu, Mingzhe Wu, Junda Liu, Jinpeng Zhao, Xin Zhou, Jingyang Yu, Pei Lin, Shaochun Teng, Yuanhong Yu, Wancheng Wang, Ya Duan, Changkui Shi, Fazhan Materials Science Mesoscale and Nanoscale Physics Computational Physics Quantum Physics Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is essential for understanding functionality and enabling controlled engineering. In 4H-SiC, the PL5 and PL6 centers have long been recognized for their exceptional charge stability and room-temperature optically detected magnetic resonance (ODMR) performance, but their structural origin has remained elusive for over a decade. Here, we provide direct evidence for their oxygen-vacancy (${\rm O_C V_{Si}}$) origins through a combined chemical and isotopic control strategy. Under oxygen ion implantation, we observe over tenfold enhancement in the yield of PL5 and PL6 compared to nitrogen ion implantation. Furthermore, implantation with $^{17}{\rm O}$ ions produces PL5 and PL6 defects that exhibit a characteristic six-fold $^{17}{\rm O}$ hyperfine splitting in their ODMR spectra. These results affirm PL6 as the ${\rm O_C V_{Si}}$ defect in the $hh$ configuration. For PL5, the oxygen-related evidence, together with \textit{ab initio} calculations and additional measurements of the zero-field splitting and hyperfine structure, establishes it as the ${\rm O_C V_{Si}}$ defect in the $kh$ configuration. This unambiguous structural identification, achieved through materials-level chemical control, provides the microscopic foundation for deterministic engineering of these defects, paving the way for scalable photonic devices and high-sensitivity ensemble quantum sensors based on oxygen-vacancy centers. |
| title | Oxygen-vacancy quantum spin defects in silicon carbide |
| topic | Materials Science Mesoscale and Nanoscale Physics Computational Physics Quantum Physics |
| url | https://arxiv.org/abs/2504.07558 |