Cover Image

Oxygen-vacancy quantum spin defects in silicon carbide

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Chen, Yu, Zhang, Qi, Liu, Mingzhe, Wu, Junda, Liu, Jinpeng, Zhao, Xin, Zhou, Jingyang, Yu, Pei, Lin, Shaochun, Teng, Yuanhong, Yu, Wancheng, Wang, Ya, Duan, Changkui, Shi, Fazhan
Format:	Preprint
Published:	2025
Subjects:	Materials Science Mesoscale and Nanoscale Physics Computational Physics Quantum Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Photoionization current spectroscopy of individual silicon vacancies in silicon carbide
by: Okajima, Kazuki, et al.
Published: (2025)

Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
by: Morioka, Naoya, et al.
Published: (2025)

Demonstration of quantum error detection in a silicon quantum processor
by: Zhang, Chunhui, et al.
Published: (2025)

Radio-frequency reflectometry in silicon carbide large-area transistors
by: Zotov, Alexander, et al.
Published: (2026)

Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures
by: Wu, Shuhao, et al.
Published: (2024)

Directional entanglement of spin-orbit locked nitrogen-vacancy centers by magnons
by: Xue, Zhiping, et al.
Published: (2025)

Optomechanical quantum bus for donor spins in silicon
by: Lyyra, Henri, et al.
Published: (2025)

Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride
by: Liu, Zhongyuan, et al.
Published: (2024)

Single spin qubit geometric gate in a silicon quantum dot
by: Ma, Rong-Long, et al.
Published: (2023)

Energy efficient coherent quantum control of nitrogen vacancy (NV) spin with nanoscale magnets
by: Chowdhury, Md Fahim F, et al.
Published: (2024)

Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$
by: Hötger, Alexander, et al.
Published: (2022)

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
by: Krishnan, Radha, et al.
Published: (2024)

Energy level structure of diamond silicon vacancy centers in an off-axis magnetic field
by: Wu, Shuhao, et al.
Published: (2024)

Electrical operation of hole spin qubits in planar MOS silicon quantum dots
by: Wang, Zhanning, et al.
Published: (2023)

Vibrational properties of epitaxial graphene buffer layer on silicon carbide
by: Radtke, Guillaume, et al.
Published: (2025)

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
by: Nakamura, Yuki, et al.
Published: (2026)

Running a six-qubit quantum circuit on a silicon spin qubit array
by: de Fuentes, I. Fernández, et al.
Published: (2025)

Unconventional Rashba spin splitting and persistent spin helices based on SU(2) symmetry in PtSe$_2$ nanoribbons
by: Yu, Bo-Wen, et al.
Published: (2023)

Isotope engineering for spin defects in van der Waals materials
by: Gong, Ruotian, et al.
Published: (2023)

Improved placement precision of implanted donor spin qubits in silicon using molecule ions
by: Holmes, Danielle, et al.
Published: (2023)

Schrödinger cat states of a nuclear spin qudit in silicon
by: Yu, Xi, et al.
Published: (2024)

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
by: Klos, Jan, et al.
Published: (2024)

Lindbladian dynamics with loss of quantum jumps
by: Liu, Yu-Guo, et al.
Published: (2024)

Correcting on-chip distortion of control pulses with silicon spin qubits
by: Ni, Ming, et al.
Published: (2023)

Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
by: Jin, Ik Kyeong, et al.
Published: (2024)

High-fidelity single-spin shuttling in silicon
by: De Smet, Maxim, et al.
Published: (2024)

All-optical scanning vector magnetometry based on fine and hyperfine interactions in spin-$\frac{3}{2}$ centers in silicon carbide
by: Likhachev, Kirill V., et al.
Published: (2024)

Strong unidirectional Rashba state induced by extended vacancy line defects in a $1T'$-WTe$_{2}$ monolayer
by: Absor, Moh. Adhib Ulil, et al.
Published: (2023)

High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
by: Lainé, Constance, et al.
Published: (2025)

Impact of vacancies on twisted bilayer graphene quantum point contacts
by: Moles, Pablo, et al.
Published: (2023)

Scaling of silicon spin qubits under correlated noise
by: Rojas-Arias, Juan S., et al.
Published: (2026)

Two-qubit logic between distant spins in silicon
by: Dijkema, Jurgen, et al.
Published: (2023)

A heat-resilient hole spin qubit in silicon
by: Champain, V., et al.
Published: (2025)

Weight-four parity checks with silicon spin qubits
by: Undseth, Brennan, et al.
Published: (2026)

The formation of a nuclear-spin dark state in silicon
by: Cai, Xinxin, et al.
Published: (2024)

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %
by: Takeda, Kenta, et al.
Published: (2023)

Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
by: Ban, Yoshisuke, et al.
Published: (2024)

Protected valley splitting against interface disorder toward scalable silicon electron spin qubits
by: Liu, Yang, et al.
Published: (2025)

Dual-frequency spin resonance spectroscopy of diamond nitrogen-vacancy centers in zero magnetic field
by: Dmitriev, A. K., et al.
Published: (2019)

Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide
by: van de Stolpe, G. L., et al.
Published: (2024)