Quasi-rigid-band behavior and band gap changes upon isovalent substitution in Cs$_3$Bi$_2$Br$_{9-x}$I$_x$

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Main Author: Butorin, Sergei M.
Format: Preprint
Published: 2025
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_version_ 1866913787453374464
author Butorin, Sergei M.
author_facet Butorin, Sergei M.
contents The recently introduced approach, combining the parameter-free Armiento-Kümmel generalized gradient approximation exchange functional with the nonseparable gradient approximation Minnesota correlation functional, was used to calculate the electronic structure of the Cs$_3$Bi$_2$Br$_{9-x}$I$_x$ series within density functional theory including the spin-orbit coupling. The changes in the band gap size and its dependence on the $x$ value was investigated. The band gap was found to be of indirect nature and it decreases with increasing I content as long as the system is in the $P\overline{3}m1$ phase. A clear non-linear dependence of the band gap size on $x$ was established which is in qualitative and quantitative agreement with reported experimental data. The quasi-rigid band behavior of the states in the valence and conduction bands of the $P\overline{3}m1$ phase is discussed since no significant changes in the shape of the total density of unoccupied states were observed upon the isovalent substitution.
format Preprint
id arxiv_https___arxiv_org_abs_2504_07641
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Quasi-rigid-band behavior and band gap changes upon isovalent substitution in Cs$_3$Bi$_2$Br$_{9-x}$I$_x$
Butorin, Sergei M.
Materials Science
The recently introduced approach, combining the parameter-free Armiento-Kümmel generalized gradient approximation exchange functional with the nonseparable gradient approximation Minnesota correlation functional, was used to calculate the electronic structure of the Cs$_3$Bi$_2$Br$_{9-x}$I$_x$ series within density functional theory including the spin-orbit coupling. The changes in the band gap size and its dependence on the $x$ value was investigated. The band gap was found to be of indirect nature and it decreases with increasing I content as long as the system is in the $P\overline{3}m1$ phase. A clear non-linear dependence of the band gap size on $x$ was established which is in qualitative and quantitative agreement with reported experimental data. The quasi-rigid band behavior of the states in the valence and conduction bands of the $P\overline{3}m1$ phase is discussed since no significant changes in the shape of the total density of unoccupied states were observed upon the isovalent substitution.
title Quasi-rigid-band behavior and band gap changes upon isovalent substitution in Cs$_3$Bi$_2$Br$_{9-x}$I$_x$
topic Materials Science
url https://arxiv.org/abs/2504.07641