Antiferromagnetic Chiral Bobber Formation and Topological Proximity Effect in MnBi2Te4

Fuente: arXiv
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Autori principali: Xu, Y., Kurebayashi, D., Zhang, D., Schoenherr, P., Li, L., Yue, Z., Ren, W. J., Han, M. -G., Zhu, Y., Cheng, Z., Wang, X., Tretiakov, Oleg A., Seidel, J.
Natura: Preprint
Pubblicazione: 2025
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author Xu, Y.
Kurebayashi, D.
Zhang, D.
Schoenherr, P.
Li, L.
Yue, Z.
Ren, W. J.
Han, M. -G.
Zhu, Y.
Cheng, Z.
Wang, X.
Tretiakov, Oleg A.
Seidel, J.
author_facet Xu, Y.
Kurebayashi, D.
Zhang, D.
Schoenherr, P.
Li, L.
Yue, Z.
Ren, W. J.
Han, M. -G.
Zhu, Y.
Cheng, Z.
Wang, X.
Tretiakov, Oleg A.
Seidel, J.
contents With topological materials being billed as the key to a new generation of nanoelectronics via either functional real-space topological structures (domain walls, skyrmions etc.) or via momentum-space topology (topological insulators), tailored and controllable topological properties are of paramount significance, since they lead to topologically protected states with negligible dissipation, enabling stable and non-volatile information processing. Here, we report on the evolution of topological magnetic textures in the proximity of other topological defects, i.e., antiferromagnetic domain walls in the topological insulator MnBi2Te4. The transition from the antiferromagnetic ground state to a canted antiferromagnetic state at finite magnetic fields is accompanied by the formation of chiral bobbers - bulk-terminated topological defects adjacent to the domain walls in this system, leading to a topological proximity effect.
format Preprint
id arxiv_https___arxiv_org_abs_2504_07747
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Antiferromagnetic Chiral Bobber Formation and Topological Proximity Effect in MnBi2Te4
Xu, Y.
Kurebayashi, D.
Zhang, D.
Schoenherr, P.
Li, L.
Yue, Z.
Ren, W. J.
Han, M. -G.
Zhu, Y.
Cheng, Z.
Wang, X.
Tretiakov, Oleg A.
Seidel, J.
Mesoscale and Nanoscale Physics
Materials Science
With topological materials being billed as the key to a new generation of nanoelectronics via either functional real-space topological structures (domain walls, skyrmions etc.) or via momentum-space topology (topological insulators), tailored and controllable topological properties are of paramount significance, since they lead to topologically protected states with negligible dissipation, enabling stable and non-volatile information processing. Here, we report on the evolution of topological magnetic textures in the proximity of other topological defects, i.e., antiferromagnetic domain walls in the topological insulator MnBi2Te4. The transition from the antiferromagnetic ground state to a canted antiferromagnetic state at finite magnetic fields is accompanied by the formation of chiral bobbers - bulk-terminated topological defects adjacent to the domain walls in this system, leading to a topological proximity effect.
title Antiferromagnetic Chiral Bobber Formation and Topological Proximity Effect in MnBi2Te4
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2504.07747