Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916941334052864 |
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| author | Cruces, Sofía Ganeriwala, Mohit D. Lee, Jimin Ran, Ke Jo, Janghyun Völkel, Lukas Braun, Dennis Canto, Bárbara Marín, Enrique G. Kalisch, Holger Heuken, Michael Vescan, Andrei Dunin-Borkowski, Rafal Mayer, Joachim Godoy, Andrés Daus, Alwin Lemme, Max C. |
| author_facet | Cruces, Sofía Ganeriwala, Mohit D. Lee, Jimin Ran, Ke Jo, Janghyun Völkel, Lukas Braun, Dennis Canto, Bárbara Marín, Enrique G. Kalisch, Holger Heuken, Michael Vescan, Andrei Dunin-Borkowski, Rafal Mayer, Joachim Godoy, Andrés Daus, Alwin Lemme, Max C. |
| contents | Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ~0.16 V and ~0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in-situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semi-classical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_07979 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices Cruces, Sofía Ganeriwala, Mohit D. Lee, Jimin Ran, Ke Jo, Janghyun Völkel, Lukas Braun, Dennis Canto, Bárbara Marín, Enrique G. Kalisch, Holger Heuken, Michael Vescan, Andrei Dunin-Borkowski, Rafal Mayer, Joachim Godoy, Andrés Daus, Alwin Lemme, Max C. Materials Science Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ~0.16 V and ~0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in-situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semi-classical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms. |
| title | Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.07979 |