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| Main Authors: | , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.08394 |
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| _version_ | 1866913788736831488 |
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| author | Yao, Yuxuan Xiao, Chen Ning, Xiaobai Cai, Wenlong Guo, Xianzeng Guo, Zongxia Yang, Kailin Xiong, Danrong Yan, Zhengjie Lu, Shiyang Zhang, Hongchao Cheng, Siyuan Xu, Renyou Ma, Dinghao Wang, Chao Wang, Zhaohao Zhu, Daoqian Cao, Kaihua Liu, Hongxi Manchon, Aurélien Zhao, Weisheng |
| author_facet | Yao, Yuxuan Xiao, Chen Ning, Xiaobai Cai, Wenlong Guo, Xianzeng Guo, Zongxia Yang, Kailin Xiong, Danrong Yan, Zhengjie Lu, Shiyang Zhang, Hongchao Cheng, Siyuan Xu, Renyou Ma, Dinghao Wang, Chao Wang, Zhaohao Zhu, Daoqian Cao, Kaihua Liu, Hongxi Manchon, Aurélien Zhao, Weisheng |
| contents | Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with magnetic tunnel junctions. Here we demonstrate an orbital Hall effect-driven magnetic tunnel junction based on Ru/W bilayer, where the Ru layer possesses a strong orbital Hall conductivity and the α-W layer features an orbital-to-spin conversion efficiency exceeding 90% because of the large orbit-spin diffusivity. By harnessing the giant orbital torque, we achieve a 28.7-picosecond switching and a five to eight-fold reduction in driving voltages over conventional spin-orbit torque magnetic memories. Our work bridges the critical gap between orbital effects and magnetic memory applications, significantly advancing the field of spintronics and orbitronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_08394 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions Yao, Yuxuan Xiao, Chen Ning, Xiaobai Cai, Wenlong Guo, Xianzeng Guo, Zongxia Yang, Kailin Xiong, Danrong Yan, Zhengjie Lu, Shiyang Zhang, Hongchao Cheng, Siyuan Xu, Renyou Ma, Dinghao Wang, Chao Wang, Zhaohao Zhu, Daoqian Cao, Kaihua Liu, Hongxi Manchon, Aurélien Zhao, Weisheng Materials Science Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with magnetic tunnel junctions. Here we demonstrate an orbital Hall effect-driven magnetic tunnel junction based on Ru/W bilayer, where the Ru layer possesses a strong orbital Hall conductivity and the α-W layer features an orbital-to-spin conversion efficiency exceeding 90% because of the large orbit-spin diffusivity. By harnessing the giant orbital torque, we achieve a 28.7-picosecond switching and a five to eight-fold reduction in driving voltages over conventional spin-orbit torque magnetic memories. Our work bridges the critical gap between orbital effects and magnetic memory applications, significantly advancing the field of spintronics and orbitronics. |
| title | Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.08394 |