Copertina

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Dettagli Bibliografici
Autori principali: Yao, Yuxuan, Xiao, Chen, Ning, Xiaobai, Cai, Wenlong, Guo, Xianzeng, Guo, Zongxia, Yang, Kailin, Xiong, Danrong, Yan, Zhengjie, Lu, Shiyang, Zhang, Hongchao, Cheng, Siyuan, Xu, Renyou, Ma, Dinghao, Wang, Chao, Wang, Zhaohao, Zhu, Daoqian, Cao, Kaihua, Liu, Hongxi, Manchon, Aurélien, Zhao, Weisheng
Natura: Preprint
Pubblicazione: 2025
Soggetti:
Materials Science
Accesso online:https://arxiv.org/abs/2504.08394
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Sommario:
  • Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low orbital-to-spin conversion efficiency and incompatibility with magnetic tunnel junctions. Here we demonstrate an orbital Hall effect-driven magnetic tunnel junction based on Ru/W bilayer, where the Ru layer possesses a strong orbital Hall conductivity and the α-W layer features an orbital-to-spin conversion efficiency exceeding 90% because of the large orbit-spin diffusivity. By harnessing the giant orbital torque, we achieve a 28.7-picosecond switching and a five to eight-fold reduction in driving voltages over conventional spin-orbit torque magnetic memories. Our work bridges the critical gap between orbital effects and magnetic memory applications, significantly advancing the field of spintronics and orbitronics.

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