Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation

Fuente: arXiv
Enregistré dans:
Détails bibliographiques
Auteurs principaux: Zhang, Heng, Zhang, Yiying, Zhang, Yong, Chen, Bo, Guo, Jingwen, Du, Yu, Li, Jiajun, Xie, Hangkai, Zhang, Zhixin, Zhou, Fuwei, Wang, Tianqi, Qi, Wuyi, Wang, Xuefeng, Fei, Fucong, Song, Fengqi
Format: Preprint
Publié: 2025
Sujets:
Accès en ligne:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866916744970371072
author Zhang, Heng
Zhang, Yiying
Zhang, Yong
Chen, Bo
Guo, Jingwen
Du, Yu
Li, Jiajun
Xie, Hangkai
Zhang, Zhixin
Zhou, Fuwei
Wang, Tianqi
Qi, Wuyi
Wang, Xuefeng
Fei, Fucong
Song, Fengqi
author_facet Zhang, Heng
Zhang, Yiying
Zhang, Yong
Chen, Bo
Guo, Jingwen
Du, Yu
Li, Jiajun
Xie, Hangkai
Zhang, Zhixin
Zhou, Fuwei
Wang, Tianqi
Qi, Wuyi
Wang, Xuefeng
Fei, Fucong
Song, Fengqi
contents MnBi2nTe3n+1 (MBT) is a representative family of intrinsic magnetic topological insulators, in which numerous exotic phenomena such as the quantum anomalous Hall effect are expected. The high-quality crystal growth and magnetism manipulation are the most essential processes. Here we develop a modified chemical vapor transport method using a feedback-regulated strategy, which provides the closed-loop control of growth temperature within +/- 0.1 degree Celsius. Single crystals of MnBi2Te4, MnBi4Te7, and MnBi6Te10 are obtained under different temperature intervals respectively, and show variable tunability on magnetism by finely tuning the growth temperatures. Specifically, the cold-end temperatures not only vary the strength of antiferromagnetic coupling in MnBi2Te4, but also induce magnetic ground state transitions from antiferromagnetism to ferromagnetism in MnBi4Te7 and MnBi6Te10. In MnBi2Te4 with optimized magnetism, quantized transport with Chern insulator state is also realized at the low field of 3.7 T. Our results provide a systematic picture for the crystal growth and the rich magnetic tunability of MBT family, providing richer platforms for the related researches combining magnetism and topological physics.
format Preprint
id arxiv_https___arxiv_org_abs_2504_08397
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation
Zhang, Heng
Zhang, Yiying
Zhang, Yong
Chen, Bo
Guo, Jingwen
Du, Yu
Li, Jiajun
Xie, Hangkai
Zhang, Zhixin
Zhou, Fuwei
Wang, Tianqi
Qi, Wuyi
Wang, Xuefeng
Fei, Fucong
Song, Fengqi
Materials Science
MnBi2nTe3n+1 (MBT) is a representative family of intrinsic magnetic topological insulators, in which numerous exotic phenomena such as the quantum anomalous Hall effect are expected. The high-quality crystal growth and magnetism manipulation are the most essential processes. Here we develop a modified chemical vapor transport method using a feedback-regulated strategy, which provides the closed-loop control of growth temperature within +/- 0.1 degree Celsius. Single crystals of MnBi2Te4, MnBi4Te7, and MnBi6Te10 are obtained under different temperature intervals respectively, and show variable tunability on magnetism by finely tuning the growth temperatures. Specifically, the cold-end temperatures not only vary the strength of antiferromagnetic coupling in MnBi2Te4, but also induce magnetic ground state transitions from antiferromagnetism to ferromagnetism in MnBi4Te7 and MnBi6Te10. In MnBi2Te4 with optimized magnetism, quantized transport with Chern insulator state is also realized at the low field of 3.7 T. Our results provide a systematic picture for the crystal growth and the rich magnetic tunability of MBT family, providing richer platforms for the related researches combining magnetism and topological physics.
title Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation
topic Materials Science
url https://arxiv.org/abs/2504.08397