Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866917186947252224 |
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| author | Jiang, Cunyuan Dong, Weicen Baggioli, Matteo |
| author_facet | Jiang, Cunyuan Dong, Weicen Baggioli, Matteo |
| contents | We demonstrate that vacancies can induce topologically protected localized electronic excitations within the bulk of a topological insulator, and when sufficiently close, give rise to one-dimensional propagating chiral bulk modes. We show that the dynamics of these modes can be effectively described by a tight-binding Hamiltonian, with the hopping parameter determined by the overlap of electronic wave functions between adjacent vacancies, accurately predicting the low-energy spectrum. Building on this phenomenon, we propose that vacancies in topological materials can be utilized to design atomic-scale resistive circuits, and estimate the associated resistance as a function of the vacancy distribution's geometric properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_08416 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes Jiang, Cunyuan Dong, Weicen Baggioli, Matteo Mesoscale and Nanoscale Physics Other Condensed Matter We demonstrate that vacancies can induce topologically protected localized electronic excitations within the bulk of a topological insulator, and when sufficiently close, give rise to one-dimensional propagating chiral bulk modes. We show that the dynamics of these modes can be effectively described by a tight-binding Hamiltonian, with the hopping parameter determined by the overlap of electronic wave functions between adjacent vacancies, accurately predicting the low-energy spectrum. Building on this phenomenon, we propose that vacancies in topological materials can be utilized to design atomic-scale resistive circuits, and estimate the associated resistance as a function of the vacancy distribution's geometric properties. |
| title | Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2504.08416 |