Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , , , , , , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866917074634276864 |
|---|---|
| author | Turker, Furkan Xu, Bohan Dong, Chengye Labella III, Michael Nayir, Nadire Sheremetyeva, Natalya Trdinich, Zachary J. Zhang, Duanchen Adabasi, Gokay Pourbahari, Bita Auker, Wesley E. Wang, Ke Baykara, Mehmet Z. Meunier, Vincent Bassim, Nabil van Duin, Adri C. T. Crespi, Vincent H. Robinson, Joshua A. |
| author_facet | Turker, Furkan Xu, Bohan Dong, Chengye Labella III, Michael Nayir, Nadire Sheremetyeva, Natalya Trdinich, Zachary J. Zhang, Duanchen Adabasi, Gokay Pourbahari, Bita Auker, Wesley E. Wang, Ke Baykara, Mehmet Z. Meunier, Vincent Bassim, Nabil van Duin, Adri C. T. Crespi, Vincent H. Robinson, Joshua A. |
| contents | High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, we present the synthesis of a new 2D dielectric, monolayer InO2, which differs in stoichiometry from its bulk form, over a large area (>300 um2) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, we tune the thickness of InO2 where predominantly (~85%) monolayer InO2 is formed. The preference for monolayer formation of InO2 is explained using ReaxFF reactive molecular dynamics and density functional theory (DFT) calculations. Additionally, the band gap of InO2 is calculated to be 4.1 eV, differing from its bulk form (2.7 eV). Furthermore, MOS-based Schottky diode measurements on InO2 intercalated EG/n-SiC demonstrate that the EG/n-SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87 eV and a rectification ratio of ~10^5. These findings introduce a new addition to the 2D dielectric family, showing significant potential for monolayer InO2 to be used as a barrier in vertical electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_09370 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices Turker, Furkan Xu, Bohan Dong, Chengye Labella III, Michael Nayir, Nadire Sheremetyeva, Natalya Trdinich, Zachary J. Zhang, Duanchen Adabasi, Gokay Pourbahari, Bita Auker, Wesley E. Wang, Ke Baykara, Mehmet Z. Meunier, Vincent Bassim, Nabil van Duin, Adri C. T. Crespi, Vincent H. Robinson, Joshua A. Materials Science High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, we present the synthesis of a new 2D dielectric, monolayer InO2, which differs in stoichiometry from its bulk form, over a large area (>300 um2) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, we tune the thickness of InO2 where predominantly (~85%) monolayer InO2 is formed. The preference for monolayer formation of InO2 is explained using ReaxFF reactive molecular dynamics and density functional theory (DFT) calculations. Additionally, the band gap of InO2 is calculated to be 4.1 eV, differing from its bulk form (2.7 eV). Furthermore, MOS-based Schottky diode measurements on InO2 intercalated EG/n-SiC demonstrate that the EG/n-SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87 eV and a rectification ratio of ~10^5. These findings introduce a new addition to the 2D dielectric family, showing significant potential for monolayer InO2 to be used as a barrier in vertical electronic devices. |
| title | Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.09370 |