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Main Authors: Bowness, Camille, Meynell, Simon A., Dobinson, Michael, Clear, Chloe, Jooya, Kais, Brunelle, Nicholas, Keshavarz, Mehdi, Boos, Katarina, Gascoine, Melanie, Taherizadegan, Shahrzad, Simon, Christoph, Thewalt, Mike L. W., Simmons, Stephanie, Higginbottom, Daniel B.
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2504.09908
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author Bowness, Camille
Meynell, Simon A.
Dobinson, Michael
Clear, Chloe
Jooya, Kais
Brunelle, Nicholas
Keshavarz, Mehdi
Boos, Katarina
Gascoine, Melanie
Taherizadegan, Shahrzad
Simon, Christoph
Thewalt, Mike L. W.
Simmons, Stephanie
Higginbottom, Daniel B.
author_facet Bowness, Camille
Meynell, Simon A.
Dobinson, Michael
Clear, Chloe
Jooya, Kais
Brunelle, Nicholas
Keshavarz, Mehdi
Boos, Katarina
Gascoine, Melanie
Taherizadegan, Shahrzad
Simon, Christoph
Thewalt, Mike L. W.
Simmons, Stephanie
Higginbottom, Daniel B.
contents To find practical application as photon sources for entangled optical resource states or as spin-photon interfaces in entangled networks, semiconductor emitters must produce indistinguishable photons with high efficiency and spectral stability. Nanophotonic cavity integration increases efficiency and bandwidth, but it also introduces environmental charge instability and spectral diffusion. Among various candidates, silicon colour centres have emerged as compelling platforms for integrated-emitter quantum technologies. Here we investigate the dynamics of spectral wandering in nanophotonics-coupled, individual silicon T centres using spectral correlation measurements. We observe that spectral fluctuations are driven predominantly by the near-infrared excitation laser, consistent with a power-dependent Ornstein-Uhlenbeck process, and show that the spectrum is stable for up to 1.5 ms in the dark. We demonstrate a 35x narrowing of the emitter linewidth to 110 MHz using a resonance-check scheme and discuss the advantage for pairwise entanglement rates and optical resource state generators. Finally, we report laser-induced spin-mixing in the excited state and discuss potential mechanisms common to both phenomena. These effects must be considered in calibrating T centre devices for high-performance entanglement generation.
format Preprint
id arxiv_https___arxiv_org_abs_2504_09908
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Laser-induced spectral diffusion and excited-state mixing of silicon T centres
Bowness, Camille
Meynell, Simon A.
Dobinson, Michael
Clear, Chloe
Jooya, Kais
Brunelle, Nicholas
Keshavarz, Mehdi
Boos, Katarina
Gascoine, Melanie
Taherizadegan, Shahrzad
Simon, Christoph
Thewalt, Mike L. W.
Simmons, Stephanie
Higginbottom, Daniel B.
Quantum Physics
To find practical application as photon sources for entangled optical resource states or as spin-photon interfaces in entangled networks, semiconductor emitters must produce indistinguishable photons with high efficiency and spectral stability. Nanophotonic cavity integration increases efficiency and bandwidth, but it also introduces environmental charge instability and spectral diffusion. Among various candidates, silicon colour centres have emerged as compelling platforms for integrated-emitter quantum technologies. Here we investigate the dynamics of spectral wandering in nanophotonics-coupled, individual silicon T centres using spectral correlation measurements. We observe that spectral fluctuations are driven predominantly by the near-infrared excitation laser, consistent with a power-dependent Ornstein-Uhlenbeck process, and show that the spectrum is stable for up to 1.5 ms in the dark. We demonstrate a 35x narrowing of the emitter linewidth to 110 MHz using a resonance-check scheme and discuss the advantage for pairwise entanglement rates and optical resource state generators. Finally, we report laser-induced spin-mixing in the excited state and discuss potential mechanisms common to both phenomena. These effects must be considered in calibrating T centre devices for high-performance entanglement generation.
title Laser-induced spectral diffusion and excited-state mixing of silicon T centres
topic Quantum Physics
url https://arxiv.org/abs/2504.09908