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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.09918 |
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| _version_ | 1866909578974724096 |
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| author | Shukla, Gaurav K. Kumar, Prabhat Isogami, Shinji |
| author_facet | Shukla, Gaurav K. Kumar, Prabhat Isogami, Shinji |
| contents | The current-induced spin-orbit torque-based devices for magnetization switching are commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here we present the sizable SHE in CrN, a light element-based system and demonstrate the current-induced magnetization switching in the adjacent ferromagnetic layer [Co(0.35nm)/Pt(0.3nm)]3, which exhibits perpendicular magnetic anisotropy. We found the switching current density of 2.6 MA/cm2. The first principles calculation gives the spin Hall conductivity (SHC) to be 120 (hcross/e) S/cm due to intrinsic Berry curvature arising from SOC induced band splitting near Fermi-energy. The theoretically calculated intrinsic SHC is close to the experimental SHC extracted from second harmonic Hall measurement. We estimated spin Hall angle to be 0.09, demonstrating efficient charge-to-spin conversion in CrN system. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_09918 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Berry curvature-induced intrinsic spin Hall effect in light-element-based CrN system for magnetization switching Shukla, Gaurav K. Kumar, Prabhat Isogami, Shinji Materials Science The current-induced spin-orbit torque-based devices for magnetization switching are commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here we present the sizable SHE in CrN, a light element-based system and demonstrate the current-induced magnetization switching in the adjacent ferromagnetic layer [Co(0.35nm)/Pt(0.3nm)]3, which exhibits perpendicular magnetic anisotropy. We found the switching current density of 2.6 MA/cm2. The first principles calculation gives the spin Hall conductivity (SHC) to be 120 (hcross/e) S/cm due to intrinsic Berry curvature arising from SOC induced band splitting near Fermi-energy. The theoretically calculated intrinsic SHC is close to the experimental SHC extracted from second harmonic Hall measurement. We estimated spin Hall angle to be 0.09, demonstrating efficient charge-to-spin conversion in CrN system. |
| title | Berry curvature-induced intrinsic spin Hall effect in light-element-based CrN system for magnetization switching |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.09918 |