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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2504.10884 |
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| _version_ | 1866917986122596352 |
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| author | Ganesan, K. Ajikumar, P. K. |
| author_facet | Ganesan, K. Ajikumar, P. K. |
| contents | WO3-x thinfilms featuring petal-like and lamella-like nanostructures are grown under controlled oxygen partial pressures using hot filament chemical vapor deposition. These synthesized WO3-x nanostructures exhibit monoclinic structure and contain a significant amount of oxygen vacancies (VO) as confirmed by X-ray diffraction and Raman spectroscopy, respectively. These WO3-x nanostructures demonstrate sensor response to both NH3 and NO2 gases even at room temperature. However, the sensor response varies with temperature and analyte gas type. For NH3, the sensors exhibit an increase in resistance behaving like a p-type semiconductor at temperatures below 150 0C while the resistance decreases at higher temperatures, resembling n-type semiconductor behavior. On the other hand, below 150 0C, these sensors display n-type behavior towards NO2 but act like p-type semiconductor at higher temperatures. Further temperature dependent transport studies were performed in these WO3-x nanostructures in the temperature range from 25 to 300 oC, after inducing additional VO in the films through annealing under CH4. The petal-like WO3-x nanostructures display an abrupt change in resistance, indicating insulator-to-semiconductor and semiconductor-to-insulator transitions during heating and cooling cycles respectively, in the temperature range of 100 - 212 0C. In lamella-like WO3-x nanostructures, the resistance is flipped from semiconductor-to-insulator at 300 0C and remains insulating state when cooled down to 30 0C. The abnormal gas sensing behavior and insulator - semiconductor transition is discussed in terms of VO in WO3-x nanostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_10884 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unusual gas sensor response and semiconductor-to-insulator transition in WO3-x nanostructures : The role of oxygen vacancy Ganesan, K. Ajikumar, P. K. Materials Science Strongly Correlated Electrons WO3-x thinfilms featuring petal-like and lamella-like nanostructures are grown under controlled oxygen partial pressures using hot filament chemical vapor deposition. These synthesized WO3-x nanostructures exhibit monoclinic structure and contain a significant amount of oxygen vacancies (VO) as confirmed by X-ray diffraction and Raman spectroscopy, respectively. These WO3-x nanostructures demonstrate sensor response to both NH3 and NO2 gases even at room temperature. However, the sensor response varies with temperature and analyte gas type. For NH3, the sensors exhibit an increase in resistance behaving like a p-type semiconductor at temperatures below 150 0C while the resistance decreases at higher temperatures, resembling n-type semiconductor behavior. On the other hand, below 150 0C, these sensors display n-type behavior towards NO2 but act like p-type semiconductor at higher temperatures. Further temperature dependent transport studies were performed in these WO3-x nanostructures in the temperature range from 25 to 300 oC, after inducing additional VO in the films through annealing under CH4. The petal-like WO3-x nanostructures display an abrupt change in resistance, indicating insulator-to-semiconductor and semiconductor-to-insulator transitions during heating and cooling cycles respectively, in the temperature range of 100 - 212 0C. In lamella-like WO3-x nanostructures, the resistance is flipped from semiconductor-to-insulator at 300 0C and remains insulating state when cooled down to 30 0C. The abnormal gas sensing behavior and insulator - semiconductor transition is discussed in terms of VO in WO3-x nanostructures. |
| title | Unusual gas sensor response and semiconductor-to-insulator transition in WO3-x nanostructures : The role of oxygen vacancy |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2504.10884 |