Planar Hall effect in ultrathin topological insulator films

Fuente: arXiv
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Main Authors: Shafiei, Mohammad, Milošević, Milorad V.
Format: Preprint
Published: 2025
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author Shafiei, Mohammad
Milošević, Milorad V.
author_facet Shafiei, Mohammad
Milošević, Milorad V.
contents The planar Hall effect (PHE), previously observed in Weyl and Dirac semimetals due to the chiral anomaly, emerges with a different origin in topological insulators (TIs), where in-plane magnetic fields induce resistivity anisotropy. In strictly two-dimensional TIs, PHE is generally suppressed due to the inability of the out-of-plane Berry curvature to couple to the in-plane band velocity of the charge carriers. Here, we demonstrate that in ultrathin TI films, a quasi-two-dimensional system, intersurface tunneling coupling with in-plane magnetization induces electronic anisotropy, enabling a finite PHE. In addition, we reveal that strong in-plane magnetization can stabilize the thickness-dependent quantum anomalous Hall effect, typically associated with out-of-plane magnetization. These insights advance the understanding of magnetic topological phases, paving the way for next-generation spintronic devices and magnetic sensing technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2504_10980
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Planar Hall effect in ultrathin topological insulator films
Shafiei, Mohammad
Milošević, Milorad V.
Mesoscale and Nanoscale Physics
The planar Hall effect (PHE), previously observed in Weyl and Dirac semimetals due to the chiral anomaly, emerges with a different origin in topological insulators (TIs), where in-plane magnetic fields induce resistivity anisotropy. In strictly two-dimensional TIs, PHE is generally suppressed due to the inability of the out-of-plane Berry curvature to couple to the in-plane band velocity of the charge carriers. Here, we demonstrate that in ultrathin TI films, a quasi-two-dimensional system, intersurface tunneling coupling with in-plane magnetization induces electronic anisotropy, enabling a finite PHE. In addition, we reveal that strong in-plane magnetization can stabilize the thickness-dependent quantum anomalous Hall effect, typically associated with out-of-plane magnetization. These insights advance the understanding of magnetic topological phases, paving the way for next-generation spintronic devices and magnetic sensing technologies.
title Planar Hall effect in ultrathin topological insulator films
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2504.10980