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Auteurs principaux: Li, Haoyang, Thomas, Robert, Jiang, Pisu, Balram, Krishna C.
Format: Preprint
Publié: 2025
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Accès en ligne:https://arxiv.org/abs/2504.10997
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author Li, Haoyang
Thomas, Robert
Jiang, Pisu
Balram, Krishna C.
author_facet Li, Haoyang
Thomas, Robert
Jiang, Pisu
Balram, Krishna C.
contents Electro-optic modulators (EOMs) underpin a wide range of critical applications in both classical and quantum information processing. While traditionally the focus has been on building these devices in materials with large Pockels coefficient (mainly ferroelectric insulators like lithium niobate), there is a need to engineer EOMs in a semiconductor platform with a view towards device stability (in radiation-hard environments), manufacturability (wafer size and foundry compatibility) and integration (with active electronics and quantum confined structures). Here, we demonstrate true push-pull EOMs in a suspended GaAs photonic integrated circuit (PIC) platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient, and folding the two arms of a cm-scale Mach-Zehnder interferometer (MZI) modulator along two orthogonal crystal axes. Our work also shows the potential of incorporating ideas from micro-electro-mechanical systems (MEMS) in integrated photonics by demonstrating high-performance active devices built around cm-scale suspended waveguides with sub-$μ$m optical mode confinement.
format Preprint
id arxiv_https___arxiv_org_abs_2504_10997
institution arXiv
publishDate 2025
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spellingShingle Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient
Li, Haoyang
Thomas, Robert
Jiang, Pisu
Balram, Krishna C.
Optics
Applied Physics
Electro-optic modulators (EOMs) underpin a wide range of critical applications in both classical and quantum information processing. While traditionally the focus has been on building these devices in materials with large Pockels coefficient (mainly ferroelectric insulators like lithium niobate), there is a need to engineer EOMs in a semiconductor platform with a view towards device stability (in radiation-hard environments), manufacturability (wafer size and foundry compatibility) and integration (with active electronics and quantum confined structures). Here, we demonstrate true push-pull EOMs in a suspended GaAs photonic integrated circuit (PIC) platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient, and folding the two arms of a cm-scale Mach-Zehnder interferometer (MZI) modulator along two orthogonal crystal axes. Our work also shows the potential of incorporating ideas from micro-electro-mechanical systems (MEMS) in integrated photonics by demonstrating high-performance active devices built around cm-scale suspended waveguides with sub-$μ$m optical mode confinement.
title Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient
topic Optics
Applied Physics
url https://arxiv.org/abs/2504.10997