Electronic transport properties of titanium nitride grown by molecular beam epitaxy
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866913795211788288 |
|---|---|
| author | Takiguchi, Kosuke Krockenberger, Yoshiharu Ichibha, Tom Hongo, Kenta Maezono, Ryo Taniyasu, Yoshitaka Yamamoto, Hideki |
| author_facet | Takiguchi, Kosuke Krockenberger, Yoshiharu Ichibha, Tom Hongo, Kenta Maezono, Ryo Taniyasu, Yoshitaka Yamamoto, Hideki |
| contents | This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline quality, as reflected in both RRR values and lattice parameter variations. Characterization of superconductivity yielded a Ginzburg-Landau coherence length of 60.4 $\pm$ 0.6 nm, significantly higher than typical sputtered films, suggesting improved superconducting coherence. First-principles calculations, in conjunction with experimental data, provided detailed insights into the electronic structure and transport properties of the TiN films. Temperature-dependent Hall coefficient measurements further revealed the influence of anisotropic scattering mechanisms. These findings establish a promising route for the development of nitride-based superconducting materials for advanced quantum computing technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_11065 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electronic transport properties of titanium nitride grown by molecular beam epitaxy Takiguchi, Kosuke Krockenberger, Yoshiharu Ichibha, Tom Hongo, Kenta Maezono, Ryo Taniyasu, Yoshitaka Yamamoto, Hideki Superconductivity Materials Science This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline quality, as reflected in both RRR values and lattice parameter variations. Characterization of superconductivity yielded a Ginzburg-Landau coherence length of 60.4 $\pm$ 0.6 nm, significantly higher than typical sputtered films, suggesting improved superconducting coherence. First-principles calculations, in conjunction with experimental data, provided detailed insights into the electronic structure and transport properties of the TiN films. Temperature-dependent Hall coefficient measurements further revealed the influence of anisotropic scattering mechanisms. These findings establish a promising route for the development of nitride-based superconducting materials for advanced quantum computing technologies. |
| title | Electronic transport properties of titanium nitride grown by molecular beam epitaxy |
| topic | Superconductivity Materials Science |
| url | https://arxiv.org/abs/2504.11065 |