Asymmetric Resonant Ferroelectric Tunnel Junctions for Simultaneous High Tunnel Electroresistance and Low Resistance-Area Product
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917986224308224 |
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| author | Khattar, Balram Tripathi, Adarsh Brahma, Manmohan Sharma, Abhishek |
| author_facet | Khattar, Balram Tripathi, Adarsh Brahma, Manmohan Sharma, Abhishek |
| contents | Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address these challenges, we propose a doped HfO2-based, silicon-compatible asymmetric resonant ferroelectric tunnel junction design with a quantum well embedded between two ferroelectric layers, replacing the conventional metal-ferroelectric-metal structure. Using a self-consistent coupling of the non-equilibrium Green's function method with a Preisach-based model, we demonstrate that the quantum well enhances resonant tunneling effects, leading to a simultaneous reduction in the resistance-area product and a boost in the tunnel electroresistance ratio. The low-resistance state becomes more robust, while the high-resistance state is suppressed, improving readout speed and reducing power usage. We observed that incorporating a 2 nm quantum well significantly enhances the tunnel electroresistance ratio, achieving a peak value of approximately 6.15 x 10^4 percent, while simultaneously minimizing the resistance-area product to 47.1 Ohm-cm^2 at 0.175 V. Additionally, the device exhibits negative differential resistance, further enhancing its functionality. Our results confirm that this design enables scalable, energy-efficient, and high-performance non-volatile memory, making it a strong candidate for future memory technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_11137 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Asymmetric Resonant Ferroelectric Tunnel Junctions for Simultaneous High Tunnel Electroresistance and Low Resistance-Area Product Khattar, Balram Tripathi, Adarsh Brahma, Manmohan Sharma, Abhishek Mesoscale and Nanoscale Physics Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address these challenges, we propose a doped HfO2-based, silicon-compatible asymmetric resonant ferroelectric tunnel junction design with a quantum well embedded between two ferroelectric layers, replacing the conventional metal-ferroelectric-metal structure. Using a self-consistent coupling of the non-equilibrium Green's function method with a Preisach-based model, we demonstrate that the quantum well enhances resonant tunneling effects, leading to a simultaneous reduction in the resistance-area product and a boost in the tunnel electroresistance ratio. The low-resistance state becomes more robust, while the high-resistance state is suppressed, improving readout speed and reducing power usage. We observed that incorporating a 2 nm quantum well significantly enhances the tunnel electroresistance ratio, achieving a peak value of approximately 6.15 x 10^4 percent, while simultaneously minimizing the resistance-area product to 47.1 Ohm-cm^2 at 0.175 V. Additionally, the device exhibits negative differential resistance, further enhancing its functionality. Our results confirm that this design enables scalable, energy-efficient, and high-performance non-volatile memory, making it a strong candidate for future memory technologies. |
| title | Asymmetric Resonant Ferroelectric Tunnel Junctions for Simultaneous High Tunnel Electroresistance and Low Resistance-Area Product |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.11137 |