Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866908812366053376 |
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| author | Marcks, Jonathan C. Eagen, Emily Brann, Emma C. Losert, Merritt P. Oh, Talise Reily, J. Wang, Christopher S. Keith, Daniel Mohiyaddin, Fahd A. Luthi, Florian Curry, Matthew J. Zhang, Jiefei Heremans, F. Joseph Friesen, Mark Eriksson, M. A. |
| author_facet | Marcks, Jonathan C. Eagen, Emily Brann, Emma C. Losert, Merritt P. Oh, Talise Reily, J. Wang, Christopher S. Keith, Daniel Mohiyaddin, Fahd A. Luthi, Florian Curry, Matthew J. Zhang, Jiefei Heremans, F. Joseph Friesen, Mark Eriksson, M. A. |
| contents | Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array, formed in a Si$_{0.972}$Ge$_{0.028}$ quantum well, manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1$μ$m (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_12455 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium Marcks, Jonathan C. Eagen, Emily Brann, Emma C. Losert, Merritt P. Oh, Talise Reily, J. Wang, Christopher S. Keith, Daniel Mohiyaddin, Fahd A. Luthi, Florian Curry, Matthew J. Zhang, Jiefei Heremans, F. Joseph Friesen, Mark Eriksson, M. A. Mesoscale and Nanoscale Physics Quantum Physics Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array, formed in a Si$_{0.972}$Ge$_{0.028}$ quantum well, manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1$μ$m (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design. |
| title | Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2504.12455 |