High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
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arXiv
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
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| _version_ | 1866918133903654912 |
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| author | Shin, Seungheon Pal, Hridibrata Pratt, Jon Niroula, John Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Palacios, Tomás Rajan, Siddharth |
| author_facet | Shin, Seungheon Pal, Hridibrata Pratt, Jon Niroula, John Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Palacios, Tomás Rajan, Siddharth |
| contents | We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_12685 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors Shin, Seungheon Pal, Hridibrata Pratt, Jon Niroula, John Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Palacios, Tomás Rajan, Siddharth Materials Science Applied Physics We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications. |
| title | High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2504.12685 |