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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Shin, Seungheon, Pal, Hridibrata, Pratt, Jon, Niroula, John, Zhu, Yinxuan, Joishi, Chandan, Klein, Brianna A., Armstrong, Andrew, Allerman, Andrew A., Palacios, Tomás, Rajan, Siddharth
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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