Accessing quasi-flat $\textit{f}$-bands to harvest large Berry curvature in NdGaSi
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910095277817856 |
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| author | Saraswati, Anyesh Sau, Jyotirmoy Misheneva, Vera Lou, Rui Chatterjee, Sudipta Kuila, Sandip Kumar Ghanta, Bibhas Bera, Anup Kumar Jana, Partha Pratim Fedorov, Alexander Thirupathaiah, Setti Kumar, Manoranjan Kumar, Nitesh |
| author_facet | Saraswati, Anyesh Sau, Jyotirmoy Misheneva, Vera Lou, Rui Chatterjee, Sudipta Kuila, Sandip Kumar Ghanta, Bibhas Bera, Anup Kumar Jana, Partha Pratim Fedorov, Alexander Thirupathaiah, Setti Kumar, Manoranjan Kumar, Nitesh |
| contents | In typical rare-earth lanthanide compounds, the localized 4\textit{f}-electrons have a weak effect on the electrical conduction, limiting their influence on the Berry curvature and, hence, the intrinsic anomalous Hall effect. A comprehensive study of the magnetic, thermodynamic, and transport properties of single-crystalline NdGaSi, guided by first-principles calculations, reveals a ferromagnetic ground state that induces a splitting of quasi-flat 4\textit{f} electronic bands and positions them near the Fermi energy. The observation of an extraordinarily large intrinsic anomalous Hall conductivity of 1165 $Ω^{-1}$ cm$^{-1}$ implies the direct involvement of localized states in the generation of non-trivial band crossings around the Fermi energy. The angle-resolved photoemission spectroscopy measurements provide direct evidence of non-trivial crossing of the 4\textit{f}-bands with dispersive bands. These results are remarkable when compared to ferrimagnetic NdAlSi, which differs only in a non-magnetic atom (a change in the principal quantum number \textit{n} of the outer \textit{p }orbital) with the same number of valence electrons and does not exhibit any measurable anomalous Hall conductivity. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_12784 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Accessing quasi-flat $\textit{f}$-bands to harvest large Berry curvature in NdGaSi Saraswati, Anyesh Sau, Jyotirmoy Misheneva, Vera Lou, Rui Chatterjee, Sudipta Kuila, Sandip Kumar Ghanta, Bibhas Bera, Anup Kumar Jana, Partha Pratim Fedorov, Alexander Thirupathaiah, Setti Kumar, Manoranjan Kumar, Nitesh Materials Science Mesoscale and Nanoscale Physics In typical rare-earth lanthanide compounds, the localized 4\textit{f}-electrons have a weak effect on the electrical conduction, limiting their influence on the Berry curvature and, hence, the intrinsic anomalous Hall effect. A comprehensive study of the magnetic, thermodynamic, and transport properties of single-crystalline NdGaSi, guided by first-principles calculations, reveals a ferromagnetic ground state that induces a splitting of quasi-flat 4\textit{f} electronic bands and positions them near the Fermi energy. The observation of an extraordinarily large intrinsic anomalous Hall conductivity of 1165 $Ω^{-1}$ cm$^{-1}$ implies the direct involvement of localized states in the generation of non-trivial band crossings around the Fermi energy. The angle-resolved photoemission spectroscopy measurements provide direct evidence of non-trivial crossing of the 4\textit{f}-bands with dispersive bands. These results are remarkable when compared to ferrimagnetic NdAlSi, which differs only in a non-magnetic atom (a change in the principal quantum number \textit{n} of the outer \textit{p }orbital) with the same number of valence electrons and does not exhibit any measurable anomalous Hall conductivity. |
| title | Accessing quasi-flat $\textit{f}$-bands to harvest large Berry curvature in NdGaSi |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.12784 |