Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909584033054720 |
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| author | Cho, Hyunmin Wang, Yubo Leblanc, Chloe Zhang, Yinuo He, Yunfei Han, Zirun Olsson III, Roy H. Jariwala, Deep |
| author_facet | Cho, Hyunmin Wang, Yubo Leblanc, Chloe Zhang, Yinuo He, Yunfei Han, Zirun Olsson III, Roy H. Jariwala, Deep |
| contents | Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values exceeding 100 uC/cm2. However, their high coercive fields (>3 MV/cm) have limited cycling endurance to ~107 cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 1010 cycles a thousand fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm thick Al0.64Sc0.36N capacitors, we show that while complete polarization reversal (2Pr ~ 200 uC/cm2) sustains ~108 cycles, partial switching extends endurance beyond 1010 cycles while maintaining a substantial polarization (>30 uC/cm2 for 2Pr). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 um diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy efficient operation. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_13285 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN Cho, Hyunmin Wang, Yubo Leblanc, Chloe Zhang, Yinuo He, Yunfei Han, Zirun Olsson III, Roy H. Jariwala, Deep Materials Science Applied Physics Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values exceeding 100 uC/cm2. However, their high coercive fields (>3 MV/cm) have limited cycling endurance to ~107 cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 1010 cycles a thousand fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm thick Al0.64Sc0.36N capacitors, we show that while complete polarization reversal (2Pr ~ 200 uC/cm2) sustains ~108 cycles, partial switching extends endurance beyond 1010 cycles while maintaining a substantial polarization (>30 uC/cm2 for 2Pr). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 um diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy efficient operation. |
| title | Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2504.13285 |