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Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Cui, Ting, Zhou, Ying, Wang, Qianying, Rong, Dongke, Hong, Haitao, Xie, Axin, Zhang, Jun-Jie, Zhang, Qinghua, Wang, Can, Ge, Chen, Gu, Lin, Wang, Shanmin, Jin, Kuijuan, Dong, Shuai, Guo, Er-Jia
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

_version_	1866909584088629248
author	Cui, Ting Zhou, Ying Wang, Qianying Rong, Dongke Hong, Haitao Xie, Axin Zhang, Jun-Jie Zhang, Qinghua Wang, Can Ge, Chen Gu, Lin Wang, Shanmin Jin, Kuijuan Dong, Shuai Guo, Er-Jia
author_facet	Cui, Ting Zhou, Ying Wang, Qianying Rong, Dongke Hong, Haitao Xie, Axin Zhang, Jun-Jie Zhang, Qinghua Wang, Can Ge, Chen Gu, Lin Wang, Shanmin Jin, Kuijuan Dong, Shuai Guo, Er-Jia
contents	Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.810^-8 Ωcm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.
format	Preprint
id	arxiv_https___arxiv_org_abs_2504_13401
institution	arXiv
publishDate	2025
record_format	arxiv
spellingShingle	Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces Cui, Ting Zhou, Ying Wang, Qianying Rong, Dongke Hong, Haitao Xie, Axin Zhang, Jun-Jie Zhang, Qinghua Wang, Can Ge, Chen Gu, Lin Wang, Shanmin Jin, Kuijuan Dong, Shuai Guo, Er-Jia Materials Science Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes, such as oxides and nitrides, remain underexplored. Here we present the fabrication of a high-quality Dirac metal antiperovskite Ni3InN, characterized by an extremely low temperature coefficient of resistivity, approximately 1.810^-8 Ωcm/K, over a broad temperature range. Atomically sharp heterointerfaces between Ni3InN and SrVO3 were constructed, revealing intriguing interfacial phenomena. Leveraging layer-resolved scanning transmission electron microscopy and electron energy loss spectroscopy, we identified pronounced charge transfer across the well-ordered interface. Remarkably, this interfacial electron transfer from Ni3InN to SrVO3 induces an insulating interfacial layer and an emergent magnetic moment within the Ni3InN layer, consistent with first-principles calculations. These findings pave the way for novel electronic and spintronic applications by enabling tunable interfacial properties in nitride/oxide systems.
title	Charge transfer induced insulating state at antiperovskite/perovskite heterointerfaces
topic	Materials Science
url	https://arxiv.org/abs/2504.13401