Low-loss thin-film periodically poled lithium niobate waveguides fabricated by femtosecond laser photolithography

Fuente: arXiv
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Autores principales: Zhao, Guanghui, Lin, Jintian, Gao, Renhong, Guan, Jianglin, Li, Chuntao, Zheng, Xinzhi, Li, Minghui, Hou, Qifeng, Luo, Xiaochao, Qiu, Yingnuo, Qiao, Lingling, Wang, Min, Cheng, Ya
Formato: Preprint
Publicado: 2025
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author Zhao, Guanghui
Lin, Jintian
Gao, Renhong
Guan, Jianglin
Li, Chuntao
Zheng, Xinzhi
Li, Minghui
Hou, Qifeng
Luo, Xiaochao
Qiu, Yingnuo
Qiao, Lingling
Wang, Min
Cheng, Ya
author_facet Zhao, Guanghui
Lin, Jintian
Gao, Renhong
Guan, Jianglin
Li, Chuntao
Zheng, Xinzhi
Li, Minghui
Hou, Qifeng
Luo, Xiaochao
Qiu, Yingnuo
Qiao, Lingling
Wang, Min
Cheng, Ya
contents Periodically poled lithium niobate on insulator (PPLNOI) ridge waveguides are critical photonic components for both classical and quantum information processing. However, dry etching of PPLNOI waveguides often generates rough sidewalls and variations in the etching rates of oppositely poled lithium niobate ferroelectric domains, leading a relatively high propagation losses (0.25 - 1 dB/cm), which significantly limits net conversion efficiency and hinders scalable photonic integration. In this work, a low-loss PPLNOI ridge waveguide with a length of 7 mm was fabricated using ultra-smooth sidewalls through photolithography-assisted chemo-mechanical etching (PLACE) followed by high-voltage pulse poling with low cost. The average surface roughness was measured at just 0.27 nm, resulting in record-low propagation loss of 0.106 dB/cm in PPLNOI waveguides. Highly efficient second-harmonic generation was demonstrated with a normalized efficiency of 1643%/(W*cm^2) without temperature tuning, corresponding to a conversion efficiency of 805%/W, which is closed to the best conversion efficiency (i.e., 814%/W) reported in nanophotonic PPLNOI waveguide fabricated by expensive electron-beam lithography followed by dry etching. The absolute conversion efficiency reached 15.8% at a pump level of 21.6 mW. And the normalized efficiency can be even improved to 1742%/(W*cm^2) at optimal temperature of 59°C.
format Preprint
id arxiv_https___arxiv_org_abs_2504_14950
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Low-loss thin-film periodically poled lithium niobate waveguides fabricated by femtosecond laser photolithography
Zhao, Guanghui
Lin, Jintian
Gao, Renhong
Guan, Jianglin
Li, Chuntao
Zheng, Xinzhi
Li, Minghui
Hou, Qifeng
Luo, Xiaochao
Qiu, Yingnuo
Qiao, Lingling
Wang, Min
Cheng, Ya
Optics
Periodically poled lithium niobate on insulator (PPLNOI) ridge waveguides are critical photonic components for both classical and quantum information processing. However, dry etching of PPLNOI waveguides often generates rough sidewalls and variations in the etching rates of oppositely poled lithium niobate ferroelectric domains, leading a relatively high propagation losses (0.25 - 1 dB/cm), which significantly limits net conversion efficiency and hinders scalable photonic integration. In this work, a low-loss PPLNOI ridge waveguide with a length of 7 mm was fabricated using ultra-smooth sidewalls through photolithography-assisted chemo-mechanical etching (PLACE) followed by high-voltage pulse poling with low cost. The average surface roughness was measured at just 0.27 nm, resulting in record-low propagation loss of 0.106 dB/cm in PPLNOI waveguides. Highly efficient second-harmonic generation was demonstrated with a normalized efficiency of 1643%/(W*cm^2) without temperature tuning, corresponding to a conversion efficiency of 805%/W, which is closed to the best conversion efficiency (i.e., 814%/W) reported in nanophotonic PPLNOI waveguide fabricated by expensive electron-beam lithography followed by dry etching. The absolute conversion efficiency reached 15.8% at a pump level of 21.6 mW. And the normalized efficiency can be even improved to 1742%/(W*cm^2) at optimal temperature of 59°C.
title Low-loss thin-film periodically poled lithium niobate waveguides fabricated by femtosecond laser photolithography
topic Optics
url https://arxiv.org/abs/2504.14950